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PDF MA4VAT2004-1061T Data sheet ( Hoja de datos )
| Número de pieza | MA4VAT2004-1061T | |
| Descripción | High IIP3 PIN Diode Variable Attenuator | |
| Fabricantes | Tyco Electronics | |
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High IIP3 PIN Diode Variable Attenuator
1.70-2.00 GHz
Features
• RoHs and ELV compliant
• 1.4 dB Insertion Loss, Typical
• 1.4:1 VSWR, Typical
• 21 dB Attenuation, Typical
• 45 dBm IIP3, Typical
(1 MHz Offset, @ + 0 dBm Pinc)
• 0 – 1.66 Volts Control Voltage @ 1.50 mA Typical
Extra Features
• Covers the following Bands:
• DCS
• PCS
• UMTS/WCDMA/CDMA
• TD-S_CDMA
• SCDMA
• Usable Bandwidth: 1.50 GHz to 2.50 GHz
• 1.8 dB Insertion Loss, Typical
• 2:1 VSWR, Typical
• 18.5 dB Attenuation, Typical
Description and Applications
M/A-COM’s MA4VAT2004-1061T is a HMIC PIN
Diode Variable Attenuator which utilizes an
integrated 90 degree 3dB hybrid with a pair of
Silicon PIN Diodes to perform the required attenuation
function as D.C. Voltage (Current) is applied.
This device operates from 0 to 1.66 Volts at 1.50mA
typical control current for maximum attenuation. The
user can add external biasing resistors to the bias
ports for higher voltage requirements as required.
M/A-COM’s MA4VAT2004-1061T PIN Diode Vari-
able Attenuator is designed for AGC Circuit Applica-
tions requiring:
• Lower Insertion Loss
• Lower distortion through attenuation
• Large dynamic range for wide spread spectrum
applications
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
MA4VAT2004-1061T
V2
PIN Configuration
(Topview)
PIN Configuration (Topview)
PIN Function
Comments
1 DC1
2 GND
3 GND
4
RFin/out
Symetrical as RF Input/Ouput
5
RFout/in
Symetrical as RF Input/Ouput
6 GND
7 GND
8 DC2
Absolute Maximum Ratings1,2
@ T = +25 °C
Parameter
Maximum Ratings
Operating Temperature
-40 °C to +85 °C
Storage Temperature
-65 °C to +150 °C
Junction Temperature
+175 °C
RF C.W. Incident Power
+33 dBm C.W.
Reversed Current @ -30 V
l -50nA l
Control Current
50mA per Diode
1. All the above are at Room Temperature except as noted
2. Exceeding the above Limits may cause permanent damage
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
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| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MA4VAT2004-1061T.PDF ] | |
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