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PDF MA4SW510 Data sheet ( Hoja de datos )
| Número de pieza | MA4SW510 | |
| Descripción | SP5T PIN Diode Reflective Switch | |
| Fabricantes | Tyco Electronics | |
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SP5T PIN Diodewww.DataSheet4U.com
Reflective Switch
V 2.00
Features
n Ultra Broad Bandwidth: 50 MHz to 26 GHz
n 1.0 dB Insertion Loss, 30 dB Isolation at 20 GHz
n Reliable. Fully Monolithic, Glass Encapsulated
Construction
MA4SW510 Layout
Description
The MA4SW510 is a SP5T Series-Shunt broad band switch
made with M/A-COM’s HMIC TM (Heterolithic Microwave
Integrated Circuit) process, US Patent 5,268,310. This
process allows the incorporation of silicon pedestals that
form series and shunt diodes or vias by imbedding them in a
low loss, low dispersion glass. This hybrid combination of
Silicon and Glass gives HMIC Switches exceptional low
loss and remarkable high isolation through low
millimeter-wave frequencies.
Applications
These high performance switches are suitable for the use in
multi-band ECM, Radar, and instrumentation control
circuits where high isolation to insertion loss ratios are
required. With a standard +5 V/-5 V, TTL controlled PIN
diode driver, 50 ns switching speeds are achieved.
Absolute Maximum Ratings1
@ TA = +25 °C (unless otherwise
specified)
Parameter
Operating Temperature
Storage Temperature
RF C.W. Incident Power
(+/-20 mA)
DC Bias Current (Forward)
Applied Voltage (Reverse)
Value
-65 °C to +150 °C
65 °C to +175 °C
+ 30 dBm
+/-50 mA
25 V
Nominal Chip Dimensions
Chip
RF
J1
J2
J3
J4
J5
J6
Chip Dimensions (µm)
XY
1730
1480
Pad Dimensions (µm)
XY
120 120
Pad Locations (µm)
XY
00
-750
0
-750
+825
0 +1240
-750
+825
+750
0
Pad Locations Relative to J1
1. Exceeding any of these values may result in permanent
damage
1 page  
SP5T PIN Diode Reflective Switch
MA4SW510
Operation of the MA4SW510 Switch
V 2.00
The Simultaneous Application of Negative DC Current to the Low Loss Port and Positive DC current to the
Remaining Isolated Ports as shown in Figure 1 achieves operation of the MA4SW Series of PIN Diode Switches. The
Backside Area of the Die is the RF and DC Return Ground Plane. The DC Return is achieved on Common Port J1.
Constant Current Sources should supply the DC Control Currents. The diode voltages at these points will not exceed
+ 1.5 volts (1.2 volts typical) for Supply Currents up to + 50 mA. In the Low Loss State, the Series Diode must be
Forward Biased and the Shunt Diode Reverse Biased. For All the Isolated Ports, the Shunt Diode is Forward Biased
and the Series Diode is Reverse Biased. The Bias Network Design should yield > 30 dB RF to DC Isolation.
Best Insertion Loss, P1dB, IP3, and Switching Speed is Achieved by using a Voltage Pull-up Resistor in the DC
Return Path, ( J1 ). A Minimum Value of | -2V | is recommended at this Return Node, which is achievable with a
Standard , +/- 5 V TTL Controlled PIN Diode Driver. A Typical DC Bias Schematic for 2-18 GHz Operation is
shown in Figure 1.
Fig 1: 2—18 GHz Bias Network Schematic
J1
39 pF
100 Ohms
22 nH
22 pF
DC Bias
39 pF
22 nH
J6
22 pF
J2
J5 J4 J3
HMIC Switch Die
5
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet MA4SW510.PDF ] | |
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