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PDF MA4E2532L-1113 Data sheet ( Hoja de datos )
| Número de pieza | MA4E2532L-1113 | |
| Descripción | SURMOUNT Low & Medium Barrier Silicon Schottky Diodes | |
| Fabricantes | Tyco Electronics | |
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SURMOUNTTM Low & Medium Barrier
Silicon Schottky Diodes: Ring Quad Series V 2.00
www.DataSheet4U.com
Features
n Extremely Low Parasitic Capitance and Inductance
n Surface Mountable in Microwave Circuits, No
Wirebonds Required
n Rugged HMIC Construction with Polyimide Scratch
Protection
n Reliable, Multilayer Metalization with a Diffusion
Barrier, 100% Stabilization Bake (300 °C, 16 hours)
n Lower Susceptibility to ESD Damage
Description
The MA4E2532-1113 Series SurMountTM Low and Medium
Barrier, Silicon Schottky Ring Quad Diodes are fabricated with
the patented Heterolithic Microwave Integrated Circuit
(HMIC) process. HMIC circuits consist of Silicon pedestals
which form diodes or via conductors embedded in a glass
dielectric, which acts as the low dispersion, low loss,
microstrip transmission medium. The combination of silicon
and glass allows HMIC devices to have excellent loss and
power dissipation characteristics in a low profile, reliable
device.
The Surmount Schottky devices are excellent choices for
circuits requiring the small parasitics of a beam lead device
coupled with the superior mechanical performance of a chip.
The SurMount structure employs very low resistance silicon
vias to connect the Schottky contacts to the metalized
mounting pads on the bottom surface of the chip. These
devices are reliable, repeatable, and a lower cost performance
solution to conventional devices. They have lower
susceptibility to electrostatic discharge than conventional beam
lead Schottky diodes.
The multi-layer metalization employed in the fabrication of the
Surmount Schottky junctions includes a platinum diffusion
barrier, which permits all devices to be subjected to a 16-hour
non-operating stabilization bake at 300 °C.
The “ 0505 ” outline allows for Surface Mount placement and
multi-functional polarity orientations.
Applications
The MA4E2532 1113 Series SurMountTM Low and Medium
Barrier, Silicon Schottky Ring Quad Diodes are recommended
for use in microwave circuits through Ku band frequencies for
lower power applications such as mixers, sub-harmonic mixers,
detectors and limiters. The HMIC construction facilitates the
direct replacement of more fragile beam lead diodes with the
corresponding Surmount diode, which can be connected to a
hard or soft substrate circuit with solder.
Case Style 1113
A
DE
Dim
A
B
C
D Sq.
E
Inches
Min.
0.0445
Max.
0.0465
0.0445 0.0465
0.0040
0.0128
0.0128
0.0080
0.0148
0.0148
MA4E2532L-1113
MA4E2532M-1113
Equivalent Circuit
B
C
D
Millimeters
Min.
1.130
1.130
0.102
0.325
0.325
Max.
1.180
1.180
0.203
0.375
0.375
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MA4E2532L-1113.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MA4E2532L-1113 | SURMOUNT Low & Medium Barrier Silicon Schottky Diodes | Tyco Electronics |
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