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PDF MA4E2508 Data sheet ( Hoja de datos )
| Número de pieza | MA4E2508 | |
| Descripción | SURMOUNTTM Low and Medium & High Barrier Silicon Schottky Diodes | |
| Fabricantes | Tyco Electronics | |
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SURMOUNTTM Low and Medium & High Barrier Silicon
Schottky Diodes: Anti-Parallel Pair
MA4E2508 Series
V2
Features
• Extremely Low Parasitic Capitance and
Inductance
• Surface Mountable in Microwave Circuits, No
Wirebonds Required
• Rugged HMIC Construction with Polyimide
Scratch Protection
• Reliable, Multilayer Metalization with a Diffusion
• Barrier, 100% Stabilization Bake (300°C, 16
hours)
• Lower Susceptibility to ESD Damage
Description and Applications
The MA4E2508 SurMount™ Anti-Parallel Diode Series
are Silicon Low, Medium & High Barrier Schottky
Devices fabricated with the patented Heterolithic
Microwave Integrated Circuit (HMIC) process. HMIC
circuits consist of Silicon pedestals which form
diodes or via conductors embedded in a glass
dielectric, which acts as the low dispersion, low loss,
microstrip transmission medium. The combination of
silicon and glass allows HMIC devices to have
excellentwww.DataSheet4U.com loss and power dissipation characteristics
in a low profile, reliable device.
The Surmount Schottky devices are excellent
choices for circuits requiring the small parasitics of a
beam lead device coupled with the superior
mechanical performance of a chip. The SurMount
structure employs very low resistance silicon vias to
connect the Schottky contacts to the metalized
mounting pads on the bottom surface of the chip.
These devices are reliable, repeatable, and a lower
cost performance solution to conventional devices.
They have lower susceptibility to electrostatic
discharge than conventional beam lead Schottky
diodes.
The multi-layer metalization employed in the
fabrication of the Surmount Schottky junctions
includes a platinum diffusion barrier, which permits
all devices to be subjected to a 16-hour
non-operating stabilization bake at 300°C.
The “ 0502 ” outline allows for Surface Mount
placement and multi- functional polarity orientations.
The MA4E2508 Family of SurMount Schottky diodes
are recommended for use in microwave circuits
through Ku band frequencies for lower power
applications such as mixers, sub-harmonic mixers,
detectors and limiters. The HMIC construction
facilitates the direct replacement of more fragile
beam lead diodes with the corresponding Surmount
diode, which can be connected to a hard or soft
substrate circuit with solder.
Case Style 1112
A
B
DE
C
D
Dim
A
B
C
D Sq.
E
Inches
Min.
0.0445
Max.
0.0465
0.0169
0.0040
0.0128
0.0128
0.0189
0.0080
0.0148
0.0148
Millimeters
Min.
1.130
Max.
1.180
0.430
0.102
0.325
0.325
0.480
0.203
0.375
0.375
Equivalent Circuit
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
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| PDF Descargar | [ Datasheet MA4E2508.PDF ] | |
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