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PDF MA4AGSW900-287T Data sheet ( Hoja de datos )

Número de pieza MA4AGSW900-287T
Descripción AIGaAs PIN Diode High Isolation SPST Switch
Fabricantes Tyco Electronics 
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AIGaAs PIN Diode
High Isolation SPST Switch
V 1.00
www.DataSheet4U.com
Features
n 31 dB Isolation @ 0 Volts @ 3 GHz
n 0.8 dB Loss @ 10 mA @ 3 GHz
n < 10 nS Switching Speed
n Useable from 50 MHz to 6.0 GHz
SOT-23 Package Outline (Topview)
GND
Description
M/A-COM's MA4AGSW900-287T is a Gallium Arsenide SPST
PIN Diode Switch that makes use of Series Diodes featuring
Lower Loss, Higher Isolation and Faster Switching Speed. This
device is fabricated on OMCVD epitaxial wafers using a process
designed for high device uniformity and extremely low parasitics.
The switch die is fully passivated with silicon nitride and has an
additional layer of a polymer for scratch and impact protection.
This protective polymer coating provides additional moisture
protection to the SOT-23 assembly.
Applications
The small 20 fF capacitance, and the low 3.0
“ ON “ resistance of the GaAs PIN diodes allow for higher
isolation at zero volt bias and lower insertion loss vs.
comparable SPST switches. This switch is designed for use
in applications requiring improved RF performance, simple
D.C. Bias, and small device size.
J1 J2
Absolute Maximum Ratings1
Parameter
Value
Operating Temperature
-65 °C to +125 °C
Storage Temperature
-65 °C to +150 °C
Dissipated RF & DC Power
50 mW
Incident RF Power
+20 dBm C.W.
Mounting Temperature
+235 °C for 10 seconds
1. Exceeding any of these values may result in permanent
damage
Electrical Specifications @ TA = 25 °C
Parameter and Test Conditions
0.5 GHz to 3.0 GHz Frequency Range
Insertion Loss @ +10 mA ( + 3.0 V Reference Voltage ) @ 3 GHz
Isolation @ 0 Volts @ 3 GHz
Input / Output Return Loss @ +10 mA ( + 3.0 V Reference Voltage ) @ 3 GHz
Units Minimum
Value
dB -
dB 30
dB -
Typical
Value
0.8
33.0
13.0
Maximum
Value
1.3
-
-
Switching Speed (10 to 90% RF Voltage)1
nS - 10.0 -
NOTES:
1. Pin Labeled J1 is the Diode’s Anode
2. Pin Labeled J2 is the Diode’s Cathode
3. Pin Labeled GND must be connected to RF & DC Ground
1. Switching speed is measured using a TTL Controlled , +/- 5 V PIN Diode Driver. Driver delay is not included.

1 page




MA4AGSW900-287T pdf
AIGaAs PIN Diode High Isolation SPST Switch
MA4AGSW900-287T
V 1.00
Static Sensitivity
Gallium Arsenide PIN diodes are ESD sensitive and can be damaged by static electricity. Proper ESD techniques should be
used when handling these devices.
Operation of the MA4AGSW900-287T SPST Switch
Successful operation of the SPST Switch is accomplished by connecting J1 ( PIN 1 ) to a RF Bias Network , J2 ( PIN 2 ) to a
DC Return Network , and SOT-23 Ground ( PIN 3 ) to Circuit RF and D.C. Ground. Approximately + 3.0 V @ + 5 mA will
create the Insertion Loss State, and 0 V will produce the Isolation State. The Isolation value is improved slightly by applying
–3 V D.C. Bias. The SPST switch can be driven from a simple + 5 V TTL Gate Driver.
SPST Schematic
D.C. Bias
GND
PIN 3
GND
GND
RF Input
PIN1 (J1)
PIN2 (J2)
MA4AGSW900-287
RF Output
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
5
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300

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