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PDF MA4AGSW1 Data sheet ( Hoja de datos )
| Número de pieza | MA4AGSW1 | |
| Descripción | AlGaAs SPST Reflective PIN Diode Switch | |
| Fabricantes | Tyco Electronics | |
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AlGaAs SPST Reflective
PIN Diode Switch
V 1.00
www.DataSheet4U.com
Features
n Ultra Broad Bandwidth: 50 MHz to 50 GHz
n Functional Bandwidth : 50 MHz to 70 GHz
n Dual shunt diode configuration
n 0.35 dB Insertion Loss, 46 dB Isolation at 50 GHz
n Low Current consumption:
-5 V for Low Loss State
+10 mA for Isolation State
n M/A-COM’s unique patent pending AlGaAs
hetero-junction anode technology
n Silicon Nitride Passivation
n Polymide Scratch protection
MA4AGSW1 Layout
Description
M/A-COM’s MA4AGSW1 is an Aluminum-Gallium-Arsenide
anode enhanced, SPST PIN diode switch. AlGaAs anodes,
which utilize M/A-COM’s patent pending hetero-junction
technology, produce less diode resistance than conventional GaAs
processes. These devices are fabricated on a OMCVD epitaxial
wafer using a process designed for high device uniformity and
extremely low parasitics. The diodes themselves exhibit low series
resistance, low capacitance, and extremely fast switching speed.
They are fully passivated with silicon nitride and have an
additional layer of a polymer for scratch protection. The protective
coating prevents damage to the junction and the anode air bridges
during handling. Off-chip bias circuitry is required and allows
maximum design flexibility.
Applications
The low capacitance of the PIN diodes used makes it ideal for use
in microwave and millimeter wave switch designs, where ultra low
insertion loss is required. The very high shunt conductance of the
diodes dramatically improves isolation at millimeter wave
frequencies. These AlGaAs PIN switches are used in switching
arrays for radar systems, high-speed ECM circuits, and millimeter
wave measurement instrumentation.
Absolute Maximum Ratings1
@ TA = +25 °C (Unless otherwise
specified)
Parameter
Maximum Rating
Operating Temperature
-55 °C to +125 °C
Storage Temperature
-65 °C to +150 °C
Incident C.W. RF Power
+ 30 dBm @ -5 V
Reverse Voltage
25 V
Bias Current
30 mA per Diode
1. Exceeding any of these values may result in permanent
damage
Nominal Chip Dimensions
Chip
RF
J1
J2
Chip Dimensions (µm)
X
Y
780 650
Pad Dimensions (µm)
X
Y
100 100
Pad Locations (µm)
X
Y
00
+530
0
Pad Locations Relative to J1
1 page  
AlGaAs SP4T PIN Diode Switch
Assembly Considerations
The following precautions should be observed to avoid
damaging these chips.
Cleanliness
These chips should be handled in a clean environment. Do not
attempt to clean die after installation.
Electro-Static Sensitivity
These Devices are considered ESD Class1. Proper ESD
techniques should be used when handling these devices.
General Handling
The protective polymer coating on the active areas of these die
provides scratch and impact protection, particularly for the
metal airbridge which contacts the diode’s anode. Die should
primarily be handled with vacuum pickups, or alternatively
with plastic tweezers.
Mounting Techniques
These AlGaAs devices are designed to be mounted with
electrically conductive silver epoxy or with a lower
temperature solder perform, which is not rich in Sn content.
MA4AGSW1
V 1.00
Solder Die Attachment
All die attach and bonding methods should be compatible with
gold metal. Solder which does not scavange gold, such as
80Au/20Sn or Sn62/Pb36/Ag2 is recommended. Do not
expose die to a temperature greater than 300 °C for more than
10 seconds.
Electrically Conductive Epoxy
Die Attachment
Assembly can be preheated to approximately 125 °C. Use a
controlled thickness of approximately 2 mils for best electrical
and thermal conductivity. Cure epoxy as per manufacturer’s
schedule. For extended cure times, temperatures should be
kept below 150 °C.
Ribbon/Wire Bonding
Wedge thermocompression bonding or ball bonding may be
used to attach ribbons or wires to the RF bonding pads. Gold
ribbons should be 1/4 x 3 mil sq. for all RF ports for lowest
inductance and best microwave performance.
Operation of the MA4AGSW1
The Application of 0 V or a Negative DC Voltage to either J1 or J2 provides Insertion Loss for the MA4AGSW1 SPST
Reflective Switch. Isolation is achieved with +10 mA total D.C. current. Constant Current Sources should supply the
DC Control Current. The Forward Bias Diode Voltages at the Bias Node will not exceed | 1.6 volts |,
( | 1.4 | volts typical for Supply Currents up to + 30 mA). The Backside Area of the Die is the RF and DC Return
Ground Plane. The Bias Network Design should yield > 30 dB RF to DC Isolation.
Best Insertion Loss, P1dB, IP3, and Switching Speed is Achieved by applying a Minimum Value of | -2 V | at the D.C.
Bias Node, which is achievable with a Standard, +/- 5 V TTL Controlled PIN Diode Driver. Typical PIN Diode
Driver Open Circuit Output Voltages are within | 1V | of the Power Supply Voltages.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
5
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MA4AGSW1.PDF ] | |
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