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PDF CDBW140-G Data sheet ( Hoja de datos )

Número de pieza CDBW140-G
Descripción (CDBW120-G - CDBW140-G) Schottky Barrier Diode
Fabricantes Comchip Technology 
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No Preview Available ! CDBW140-G Hoja de datos, Descripción, Manual

Schottky Barrier Diode
COMCHIP
SMD Diodes Specialist
CDBW120-G Thru. CDBW140-G
Forward current: 1.0A
Reverse voltage: 20 to 40V
RoHS Device
Features
SOD-123
-For use in low voltage, high frequency inverters.
-Free wheeling, and polarity protection applications.
Mechanical Data
0.110 (2.80)
0.098 (2.50)
-Case: SOD-123, molded plastic.
-Terminals: solderable per MIL-STD-750, method
2026.
-Polarity: indicated by cathode end.
-Weight: approx. 0.008 grams.
0.028 (0.70)
0.019 (0.50)
0.053 (1.35)
0.037 (0.95)
0.154 (3.90)
0.141 (3.60)
0.071 (1.80)
0.055 (1.40)
0.008 (0.20)max
Marking
0.005 (0.12)max
0.016 (0.40)min
CDBW0120-G: SJ
CDBW0130-G: SK
CDBW0140-G: SL
Dimensions in inches and (millimeter)
Maximum Ratings (At Ta=25OC, unless otherwise noted)
Parameter
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Non-repetitive peak reverse voltage
Symbol
VRM
CDBW0120-G
20
CDBW0130-G
30
CDBW0140-G Unit
40 V
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
VRRM
VRWM
20
30
40 V
VR
RMS reverse voltage
VR(RMS)
14
21
28 V
Average rectified output current
IO
1A
Peak forward surge current @8.3ms
IFSM
25 A
Repetitive peak forward current
IFRM
625 mA
Power dissipation
PD 250 mW
Thermal resistance, junction to ambient
RθJA
500 OC/W
Storage temperature
TSTG
-65 ~ +150
OC
Electrical Characteristics (At Ta=25OC, unless otherwise noted)
Parameter
Conditions
Symbol
Min.
Max.
Unit
Reverse breakdown voltage
IR=1mA
CDBW0120-G
CDBW0130-G
CDBW0140-G
VBR
20
30
40
V
Reverse voltage leakage current
VR=20V
VR=30V
VR=40V
CDBW0120-G
CDBW0130-G
CDBW0140-G
IR
1 mA
Forward voltage
IF=1A
IF=3A
CDBW0120-G
CDBW0130-G
CDBW0140-G
CDBW0120-G
CDBW0130-G
CDBW0140-G
VF
0.45
0.55
0.60
0.75
0.875
0.90
V
Diode capacitance
VR=4V, f=1MHz
CD
120 pF
QW-BB020
REV:A
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