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PDF CLD156 Data sheet ( Hoja de datos )

Número de pieza CLD156
Descripción Large Active Area Silicon Planar photodiode
Fabricantes Clairex 
Logotipo Clairex Logotipo



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No Preview Available ! CLD156 Hoja de datos, Descripción, Manual

CLD156
Large Active Area
Silicon Planar photodiode
This product is tested to satisfy the
conditions of both the CLD156 and
the CLD156R.
0.365 (9.27)
0.355 (9.02)
0.186 (4.72)
0.164 (4.17)
® Clairex
Technologies, Inc.
May, 2001
1.000 (25.4) min
0.030 (0.76) nom
0.200 (5.08)
0.330 (8.38)
0.320 (8.13)
CATHODE (long lead)
ALL DIMENSIONS ARE IN INCHES (CMIaLsLIeM1ET2ERS)
features
100° acceptance angle
860nm peak response
TO-5 hermetic package
usable for visible through near-IR
RoHS compliant
absolute maximum ratings (TA = 25°C unless otherwise stated)
storage temperature........................................................................-65°C to +150°C
operating temperature.....................................................................-65°C to +150°C
lead soldering temperature(1) .............................................................................260°
reverse voltage ...................................................................................................30V
continuous power dissipation(2) .....................................................................200mW
description
The CLD156 and CLD156R are
0.122" x 0.222" active area silicon
notes:
1. 0.06” (1.5mm) from the header for 5 seconds maximum.
2. Derate linearly 1.28mW/°C free air temperature to TA = +150°C.
photodiodes featuring high linearity
www.DataSheet4U.com and low dark current. The TO-5
header provides thermal
environment for reliable operation
over a wide temperature range. Wide
acceptance angle permits use in IR
air communications, ambient light
detection, safety and monitoring,
security systems, etc. For additional
information, call Clairex.
electrical characteristics (TA = 25°C unless otherwise noted)
symbol parameter
min typ
max units test conditions
ISC Short-circuit current(3)
- 100 - µA VBIAS = 0V, Ee = 5mW/cm2
ID Dark current
VO Open circuit voltage(3)
- - 50 nA VF = 100mV, Ee = 0
- - 50 nA VR = 15V, Ee = 0
- 0.35 -
V Ee = 5mW/cm2
VBR Reverse breakdown
25 -
- V IR = 100µA
CJ Junction capacitance
tr, tf Output rise and fall time(4)
- - 400 pF VBIAS = 0V, f = 1MHz
- - 10 µs RL = 1k
ΘHP Total angle at half sensitivity points
- 100 - deg.
notes: 3. Radiation source is a frosted tungsten lamp at a color temperature of 2854K or equivalent.
4. Radiation source is an AlGaAs IRED operating at a peak emission wavelength of 880nm and Ee = 20mW/cm2.
Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.
Revised 3/15/06
Clairex Technologies, Inc.
Phone: 972-265-4900
1301 East Plano Parkway
Fax: 972-265-4949
Plano, Texas 75074-8524
www.clairex.com

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