DataSheet.es    


PDF 2SJ607 Data sheet ( Hoja de datos )

Número de pieza 2SJ607
Descripción MOS FIELD EFFECT TRANSISTOR
Fabricantes NEC 
Logotipo NEC Logotipo



Hay una vista previa y un enlace de descarga de 2SJ607 (archivo pdf) en la parte inferior de esta página.


Total 8 Páginas

No Preview Available ! 2SJ607 Hoja de datos, Descripción, Manual

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ607
SWITCHING
P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ607 is P-channel MOS Field Effect Transistor designed
for high current switching applications.
FEATURES
Super low on-state resistance:
RDS(on)1 = 11 mMAX. (VGS = 10 V, ID = 42 A)
RDS(on)2 = 16 mMAX. (VGS = 4.0 V, ID = 42 A)
Low input capacitance:
Ciss = 7500 pF TYP. (VDS = 10 V, VGS = 0 V)
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
www.DataSheet4U.com
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
VGSS
ID(DC)
ID(pulse)
m 20
m 83
m 332
Total Power Dissipation (TC = 25°C)
PT 160
Total Power Dissipation (TA = 25°C)
PT 1.5
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg 55 to +150
IAS 50
EAS 250
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ607
TO-220AB
2SJ607-S
TO-262
2SJ607-ZJ
2SJ607-Z
TO-263
TO-220SMD Note
Note TO-220SMD package is produced only in
Japan
(TO-220AB)
V
V
A
A
W
W (TO-262)
°C
°C
A
mJ
Notes 1. PW 10 µs, Duty cycle 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 , VGS = 20 0 V
(TO-263, TO-220SMD)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14655EJ3V0DS00 (3rd edition)
Date Published July 2002 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
2000, 2001

1 page




2SJ607 pdf
2SJ607
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
Pulsed
16 VGS = 4.0 V
4.5 V
10 V
12
8
4
0
50
0
ID = 42 A
50 100 150
Tch - Channel Temperature - ˚C
100000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
www.DataSheet4U.com
10000
Ciss
1000
Coss
Crss
100
0.1
1 10
VDS - Drain to Source Voltage - V
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
60 12
ID = 83 A
50
VDD = 48 V
40 30 V
12 V
10
VGS 8
30 6
20 4
10
0
0
VDS
40 80 120 160
QG - Gate Charge - nC
2
0
200
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100 VGS = 10 V
4.0 V
10
0V
1
0.1
0
0.5
1.0
1.5
VSD - Source to Drain Voltage - V
2.0
1000
SWITCHING CHARACTERISTICS
td(off)
100 tf
td(on)
10
1
0.1
tr
VDD = 30 V
VGS = 10 V
RG = 0
1 10 100
ID - Drain Current - A
1000
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
100
IAS = 50 A
10
EAS = 250 mJ
VDD = 30 V
RG = 25
1 VGS = 20 0 V
10 µ 100 µ
1m
L - Inductive Load - H
10 m
Data Sheet D14655EJ3V0DS
5

5 Page










PáginasTotal 8 Páginas
PDF Descargar[ Datasheet 2SJ607.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
2SJ600SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USENEC
NEC
2SJ600MOS Field Effect TransistorKexin
Kexin
2SJ601SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USENEC
NEC
2SJ601MOS Field Effect TransistorKexin
Kexin

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar