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PDF 2SJ607 Data sheet ( Hoja de datos )
| Número de pieza | 2SJ607 | |
| Descripción | MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ607
SWITCHING
P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ607 is P-channel MOS Field Effect Transistor designed
for high current switching applications.
FEATURES
• Super low on-state resistance:
RDS(on)1 = 11 mΩ MAX. (VGS = −10 V, ID = −42 A)
RDS(on)2 = 16 mΩ MAX. (VGS = −4.0 V, ID = −42 A)
• Low input capacitance:
Ciss = 7500 pF TYP. (VDS = −10 V, VGS = 0 V)
• Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
−60
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Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
VGSS
ID(DC)
ID(pulse)
m 20
m 83
m 332
Total Power Dissipation (TC = 25°C)
PT 160
Total Power Dissipation (TA = 25°C)
PT 1.5
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg −55 to +150
IAS −50
EAS 250
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ607
TO-220AB
2SJ607-S
TO-262
2SJ607-ZJ
2SJ607-Z
TO-263
TO-220SMD Note
Note TO-220SMD package is produced only in
Japan
(TO-220AB)
V
V
A
A
W
W (TO-262)
°C
°C
A
mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = −30 V, RG = 25 Ω, VGS = −20 → 0 V
(TO-263, TO-220SMD)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14655EJ3V0DS00 (3rd edition)
Date Published July 2002 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
2000, 2001
1 page  
2SJ607
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
Pulsed
16 VGS = −4.0 V
−4.5 V
−10 V
12
8
4
0
−50
0
ID = −42 A
50 100 150
Tch - Channel Temperature - ˚C
100000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
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10000
Ciss
1000
Coss
Crss
100
−0.1
−1 −10
VDS - Drain to Source Voltage - V
−100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
−60 −12
ID = −83 A
−50
VDD = −48 V
−40 −30 V
−12 V
−10
VGS −8
−30 −6
−20 −4
−10
0
0
VDS
40 80 120 160
QG - Gate Charge - nC
−2
0
200
−1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
−100 VGS = −10 V
−4.0 V
−10
0V
−1
−0.1
0
−0.5
−1.0
−1.5
VSD - Source to Drain Voltage - V
−2.0
1000
SWITCHING CHARACTERISTICS
td(off)
100 tf
td(on)
10
1
−0.1
tr
VDD = −30 V
VGS = −10 V
RG = 0 Ω
−1 −10 −100
ID - Drain Current - A
−1000
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
−100
IAS = −50 A
−10
EAS = 250 mJ
VDD = −30 V
RG = 25 Ω
−1 VGS = −20 → 0 V
10 µ 100 µ
1m
L - Inductive Load - H
10 m
Data Sheet D14655EJ3V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SJ607.PDF ] | |
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