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PDF RA45H7687M1 Data sheet ( Hoja de datos )
| Número de pieza | RA45H7687M1 | |
| Descripción | RoHS Compliance | |
| Fabricantes | Mitsubishi Electric | |
| Logotipo |  |
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ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF MOSFET MODULE
RA45H7687M1
RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA45H7687M1 is a 45-watt RF MOSFET Amplifier
Module for 12.8-volt mobile radios that operate in the 764- to
870-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage 1 and the gate voltage 2(VGG1=VGG2=0V), only a small
leakage current flows into the drain and the nominal output
signal (Pout=45W) attenuates up to 60 dB. When fixed i.e. 3.4V, is
supplied to the gate voltage 1, the output power and the drain
current increase as the gate voltage 2 increases. The output
power and the drain current increase substantially with the gate
voltage 2 around 0V (minimum) under the condition when the
gate voltage 1 is kept in 3.4V. The nominal output power
becomes available at the state that VGG2 is 4V (typical) and 5V
(maximum). At this point, VGG1 has to be kept in 3.4V.
At VGG1=3.4V & VGG2=5V, the typical gate currents are 0.4mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltages and controlling the output power
with the input power.
BLOCK DIAGRAM
2
3
14
5
1 RF Input added Gate Voltage 1(Pin&VGG1)
2 Gate Voltage 2(VGG2), Power Control
3 Drain Voltage (VDD), Battery
FEATURES
4 RF Output (Pout)
• Enhancement-Mode MOSFET Transistors
(IDD≅0 @ VDD=12.8V, VGG=0V)
www.DataSheet4U.com
• P >45W,out
ηT>33%
@VDD=12.8V, VGG1=3.4V, VGG2=5V, Pin=50mW
• Broadband Frequency Range: 764-870MHz
5 RF Ground (Case)
PACKAGE CODE: H2M
• Metal cap structure that makes the improvements of RF
radiation simple
• Low-Power Control Current IGG1+IGG2=0.4mA (typ) @ VGG1=3.4V, VGG2=5V
• Module Size: 67 x 18 x 9.9 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltages and controlling the output power
with the input power.
RoHS COMPLIANCE
• RA45H7687M1 is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
RA45H7687M1-101
RA45H7687M1
SUPPLY FORM
Antistatic tray,
10 modules/tray
MITSUBISHI ELECTRIC
1/9
18th Jan 2007
1 page  
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE RA45H7687M1
OUTLINE DRAWING (mm)
1 RF Input added Gate Voltage 1(Pin & VGG1)
2 Gate Voltage 2(VGG2)
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground (Case)
RA45H7687M1
MITSUBISHI ELECTRIC
5/9
18th Jan 2007
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet RA45H7687M1.PDF ] | |
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