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PDF IRLR8103V Data sheet ( Hoja de datos )
| Número de pieza | IRLR8103V | |
| Descripción | N-Channel Application-Specific MOSFETs | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Minimizes Parallel MOSFETs for high current
applications
• 100% R Tested
G
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRLR8103V has been optimized for all parameters
that are critical in synchronous buck converters including
RDS(on), gate charge and Cdv/dt-induced turn-on immunity.
The IRLR8103V offers an extremely low combination of
Q & R for reduced losses in both control and
sw DS(on)
synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical
PCB mount application.
PD-94021C
IRLR8103V
D
D-Pak
G
S
DEVICE CHARACTERISTICS
RDS(on)
QG
QSW
QOSS
IRLR8103V
7.9 mΩ
27 nC
12 nC
29nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source Current
TC = 25°C
(VGS > 10V)
Pulsed Drain Current
TC= 90°C
Power Dissipation eÃÃÃÃÃÃÃÃÃÃÃÃÃTC = 25°C
TC = 90°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
Symbol
VDS
VGS
ID
IDM
PD
TJ , TSTG
IS
ISM
Thermal Resistance
Parameter
ehMaximum Junction-to-Ambient
hMaximum Junction-to-Case
www.irf.com
Symbol
RθJA
RθJC
IRLR8103V
30
±20
91
63
363
115
60
-55 to 150
91
363
Units
V
A
W
°C
A
Typ.
–––
–––
Max.
50
1.09
Units
°C/W
1
10/22/04
1 page  
100
LIMITED BY PACKAGE
80
60
40
20
0
25 50 75 100 125 150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
IRLR8103V
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
V+- DD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.10
0.1 0.05
0.02
0.01
0.01
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRLR8103V.PDF ] | |
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