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PDF TGA4805-EPU Data sheet ( Hoja de datos )

Número de pieza TGA4805-EPU
Descripción Differential Transimpedance Amplifier
Fabricantes TriQuint Semiconductor 
Logotipo TriQuint Semiconductor Logotipo



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Advance Product Information
May 23, 2002
10 GB/s Differential Transimpedance Amplifier TGA4805-EPU
Key Features
• 0.25 um pHEMT Technology
• Frequency Range; 30 KHz to > 11GHz
• 1000 Differential Transimpedance
• Average Input Eq. Noise: 9 pA / Hz
• Single Supply Operation: +5V @ 45 mA
• Chip Size: 1.1 x 0.91 mm
Primary Applications
Description
• OC192/STM-64 Fiber-Optic Systems
The TriQuint TGA4805-EPU is a
wideband transimpedance amplifier with
differential outputs that provides 500 Ohm
www.DataSheet4U.com single-ended transimpedance into a
50 Ohm termination (1000 Ohm
differential into a 100 Ohm termination).
Typical output return loss is > 15 dB and
the average equivalent input noise current
is 9 pA/ Hz (1 GHz to 10 GHz). Typical
3dB BW is 30 KHz to 11GHz with 0.2 pF
of photodiode capacitance.
The TGA4805 operates from a single +5V
supply typically dissipating 225mW of DC
power. The device is backside grounded
with vias and requires no grounding bond
wires.
Typical Measured Performance
63 0
60 -3
57
Differential TZ (dB-Ohm)
54 S22 Inverting Output
51 S22 Noninverting Output
48
-6
-9
-12
-15
45 -18
42 -21
39 CPD = 0.2 pF
36 RPD = 10 Ohm
33
135
7
-24
-27
-30
9 11 13 15
Frequency (GHz)
60
CPD = 0.2 pF
50 RPD = 10 Ohm
40
The TGA4805 requires off-chip decoupling
and the RF ports are DC coupled. Each
device is 100% RF tested on-wafer to
ensure performance compliance. The
device is available in die form.
30
20
10
0
-10
1 3 5 7 9 11 13 15
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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TGA4805-EPU pdf
Advance Product Information
May 23, 2002
TGA4805-EPU
Mechanical Drawing
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
5

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