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PDF TGA4522 Data sheet ( Hoja de datos )
| Número de pieza | TGA4522 | |
| Descripción | Wide Band Driver Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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Advance Product Information
September 21, 2005
33 - 47 GHz Wide Band Driver Amplifier
TGA4522
Key Features
• Frequency Range: 33 - 47 GHz
• 27.5 dBm Nominal Psat @ 38GHz
• 27 dBm P1dB @ 38 GHz
• 36 dBm OTOI @ Pin = 19 dBm/Tone
• 18 dB Nominal Gain @ 38GHz
• 15 dB Nominal Return Loss @ 38GHz
• Bias: 6 V @ 400 mA Idq
• 0.15 um 3MI pHEMT Technology
• Chip Dimensions 2.00 x 1.45 x 0.10 mm
(0.079 x 0.057 x 0.004 in)
Primary Applications
• Digital Radio
• Point-to-Point Radio
• Point-to-Multipoint Communications
• Military SAT-COM
www.DataSheet4U.com Product Description
The TriQuint TGA4522 is a compact Driver
Amplifier MMIC for Ka-band and Q-band
applications. The part is designed using TriQuint’s
0.15um power pHEMT production process.
The TGA4522 nominally provides 27.5 dBm
saturated output power, and 27 dBm output power
at 1dB Gain compression @ 38 GHz. It also has
typical gain of 18 dB, and return loss of 15 dB.
The part is ideally suited for low cost emerging
markets such as Digital Radio, Point-to-Point
Radio and Point-to-Multi Point Communications.
The TGA4522 is 100% DC and RF tested on-wafer
to ensure performance compliance.
Lead-Free & RoHS compliant.
Measured Fixtured Data
Bias Conditions: Vd = 6 V, Idq = 400 mA
25
20
15
10
5
0
-5
-10
-15 ORL
-20
-25
Gain
IRL
32 34 36 38 40 42 44 46 48
Frequency (GHz)
30
29
28 Psat
27 P1dB
26
25
24
23
22
32 34 36 38 40 42 44 46 48
Frequency (GHz)
Note: Devices is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without
notice
1
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
1 page  
Advance Product Information
September 21, 2005
Measured Data
Bias Conditions: Vd = 6 V, Idq = 400 mA
TGA4522
30
6V
29 5V
28
27
26
25
24
23
22
21
20
32 34 36 38 40 42 44 46 48
Fre que ncy (GHz)
30
6V
29 5V
28
27
26
25
24
23
22
21
20
32 34 36 38 40 42 44 46 48
Frequency (GHz)
5
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
5 Page 
Advance Product Information
September 21, 2005
TGA4522
Assembly Process Notes
Reflow process assembly notes:
• Use AuSn (80/20) solder with limited exposure to temperatures at or above 3000C (30 seconds max).
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• No fluxes should be utilized.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.
• Organic attachment can be used in low-power applications.
• Curing should be done in a convection oven; proper exhaust is a safety concern.
• Microwave or radiant curing should not be used because of differential heating.
• Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
• Thermosonic ball bonding is the preferred interconnect technique.
• Force, time, and ultrasonics are critical parameters.
• Aluminum wire should not be used.
• Maximum stage temperature is 2000C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
11
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet TGA4522.PDF ] | |
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