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PDF TGA4514-EPU Data sheet ( Hoja de datos )
| Número de pieza | TGA4514-EPU | |
| Descripción | Ka Band 2W Power Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
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Advance Product Information
April 28, 2003
Ka Band 2W Power Amplifier
TGA4514-EPU
Key Features
• Typical Frequency Range: 31 - 35 GHz
• 33.5 dBm Nominal Psat @ Vd = 7V
• 31.5 dBm Nominal P1dB
• IMD3: 31dBc at Pout/tone=22dBm
• 19 dB Nominal Gain
• Bias 6 - 7 V, 1150 mA
• 0.25 um 2MI pHEMT Technology
• Chip Dimensions 4.0 x 3.2 x 0.1 mm
(0.161 x 0.128 x 0.004) in
Preliminary Measured Data
30 Bias Conditions: Vd = 6 V, Id = 1150 mA
20
GAIN
10
Primary Applications
• Point-to-Point Radio
• Military Radar Systems
• Ka Band Sat-Com
0
www.DataSheet4U.com
-10
ORL
-20
IRL
-30
28 29 30 31 32 33 34 35 36 37 38
Frequency (GHz)
35 Bias Conditions: Vd = 6/7 V, Id = 1150 mA
34 Vd = 7 V
33
32 Vd = 6 V
31
30
29
28
30 31 32 33 34 35 36 37
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
1
1 page  
Advance Product Information
April 28, 2003
Preliminary Measured Data
TGA4514-EPU
Bias Conditions: Vd = 6 V, Id = 1150 mA, Room Temp.
0
-5
-10
-15
-20
-25
-30
-35
28 29 30 31 32 33 34 35 36 37 38
Fre que ncy (GHz)
0
-5
-10
-15
-20
-25
-30
-35
28 29 30 31 32 33 34 35 36 37 38
Fre que ncy (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
5
5 Page 
Advance Product Information
April 28, 2003
TGA4508-EPU
Assembly Process Notes
Reflow process assembly notes:
· Use AuSn (80/20) solder with limited exposure to temperatures at or above 300§C (30 seconds max).
· An alloy station or conveyor furnace with reducing atmosphere should be used.
· No fluxes should be utilized.
· Coefficient of thermal expansion matching is critical for long-term reliability.
· Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
· Vacuum pencils and/or vacuum collets are the preferred method of pick up.
· Air bridges must be avoided during placement.
· The force impact is critical during auto placement.
· Organic attachment can be used in low-power applications.
· Curing should be done in a convection oven; proper exhaust is a safety concern.
· Microwave or radiant curing should not be used because of differential heating.
· Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
· Thermosonic ball bonding is the preferred interconnect technique.
· Force, time, and ultrasonics are critical parameters.
· Aluminum wire should not be used.
· Maximum stage temperature is 200§C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
11
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| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet TGA4514-EPU.PDF ] | |
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