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Número de pieza | T431616C | |
Descripción | 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM | |
Fabricantes | TMT | |
Logotipo | ||
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SDRAM
FEATURES
• 3.3V power supply
• Clock cycle time : 6 / 7 ns
• Dual banks operation
• LVTTL compatible with multiplexed address
• All inputs are sampled at the positive going
edge of system clock
• Burst Read Single-bit Write operation
• DQM for masking
• Auto refresh and self refresh
• 32ms refresh period (2K cycle)
• MRS cycle with address key programs
- CAS Latency ( 2 & 3 )
- Burst Length ( 1 , 2 , 4 , 8 & full page)
- Burst Type (Sequential & Interleave)
• Available package type :
- 50 pin TSOP(II)/lead-free
• Operating temperature :
- 0 ~ +70 °C
T431616C
1M x 16 SDRAM
512K x 16bit x 2Banks Synchronous DRAM
GRNERAL DESCRIPTION
The T431616C is 16,777,216 bits synchronous
high data rate Dynamic RAM organized as
2 x 524,288 words by 16 bits , fabricated with high
performance CMOS technology . Synchronous
design allows precise cycle control with the use of
system clock I/O transactions are possible on every
clock cycle . Range of operating frequencies ,
programmable burst length and programmable
latencies allow the same device to be useful for a
variety of high bandwidth , high performance
memory system applications.
ORDERING INFORMATION
PART NO.
T431616C-6S
T431616C-6SG
T431616C-7S
T431616C-7SG
CLOCK
CYCLE TIME
6ns
MAX
FREQUENCY
166 MHz
6ns 166 MHz
7ns 143 MHz
7ns 143 MHz
PACKAGE
TSOP-II
TSOP-II
Lead-free
TSOP-II
TSOP-II
Lead-free
OPERATING
TEMPERATURE
0 ~ +70 °C
0 ~ +70 °C
0 ~ +70 °C
0 ~ +70 °C
TM Technology Inc. reserves the right
P. 1
to change products or specifications without notice.
Publication Date: AUG. 2004
Revision: A
1 page tm TE
CH
T431616C
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Voltage on Any Pin Relative To Vss
VIN,VOUT
-1.0 to 4.6
V
Supply Voltage Relative To Vss
VDD,VDDQ
-1.0 to 4.6
V
Short circuit Output Current
Power Dissipation
Iout 50 mA
PD 1 W
Operating Temperature
TOPR
0 to +70
°C
Storage Temperature
Tstg -55 to +125
°C
Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
RECOMMENDED DC OPERATING CONDITIONS
(TA = 0 to +70 °C, Voltage referenced to VSS=0V)
Parameter
Symbol
Min.
Typ
Max.
Supply Voltage
VDD,VDDQ
3.0
3.3
3.6
Input High Voltage VIH 2.0 3.0 VDD+0.3V
Input Low Voltage
VIL -0.3
0
0.8
Output logic high voltage
VOH
2.4
-
-
Output logic low voltage
VOL
-
-
0.4
Input leakage current
IIL
-5
-
5
Output leakage current
IOL
-5
-
5
Note : 1. VIH (max) = 4.6V AC for pulse width ≤ 10ns acceptable.
2. VIL (min) = -1.0V AC for pulse width ≤ 10ns acceptable.
3. Any input 0V ≤ VIN ≤ VDD+ 0.3V , all other pin are not under test = 0V.
4. Dout = disable, 0V ≤ VOUT ≤ VDD .
Unit Notes
V
V1
V2
V IOH=-2mA
V IOL=2mA
uA 3
uA 4
CAPACITANCE
(TA =25 °C,VDD=3.3V, f = 1MHz)
Pin Symbol Min Max Unit
CLOCK
CCLK 2.5 4.0 pF
ADDRESS
CADD 2.5 4.0 pF
DQ0 ~ DQ15
COUT 3.0 5.0 pF
RAS,CAS,WE,CS,CKE,LDQM,
CIN
2.5 4.0 pF
UDQM
TM Technology Inc. reserves the right
P. 5
to change products or specifications without notice.
Publication Date: AUG. 2004
Revision: A
5 Page tm TE
CH
T431616C
MODE REGISTER
11 10 9 8 7 6 5 4 3 2 1 0
00001
JEDEC Standard Test Set (refresh counter test)
11 10 9 8 7 6 5 4 3 2 1 0
xx100
LTMODE WT
BL
Burst Read and Single Write (for Write Through Cache)
11 10 9 8 7 6 5 4 3 2 1 0
10
Use in future
11 10 9 8 7 6 5 4 3 2 1 0
x x x 1 1 v v v v v v v Vender Specific
11 10 9 8 7 6 5 4 3 2 1 0
00000
LTMODE WT
BL
Mode Register Set
v = Valid
x = Don’t care
Burst length
Wrap type
Bit2-0
000
001
010
011
100
101
110
111
0
1
WT=0
1
2
4
8
R
R
R
Full page
WT=1
1
2
4
8
R
R
R
R
Sequential
Interleave
Mode Register Write Timing
Latency mode
Bit6-4
000
001
010
011
100
101
110
111
CAS Latency
R
R
2
3
R
R
R
R
Remark R : Reserved
CLOCK
CKE
CS
RAS
CAS
WE
A0-A11
TM Technology Inc. reserves the right
P.11
to change products or specifications without notice.
Publication Date: AUG. 2004
Revision: A
11 Page |
Páginas | Total 30 Páginas | |
PDF Descargar | [ Datasheet T431616C.PDF ] |
Número de pieza | Descripción | Fabricantes |
T431616A | 1M x 16 SDRAM | TM |
T431616B | 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM | TMT |
T431616C | 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM | TMT |
T431616D | (T431616D/E) 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM | TMT |
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