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Número de pieza | CDBF0145 | |
Descripción | SMD Schottky Barrier Diode | |
Fabricantes | Comchip Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CDBF0145 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! SMD Schottky Barrier Diode
CDBF0145 (Lead-free Device)
Io = 100 mA
VR = 45 Volt s
Features
COMCHIP
SMD Diodes Specialist
Designed for mounting on small surface.
Extremely thin/leadless package.
Low leakage current (IR=0.1uA typ.
@VR=10V).
Majority carrier conduction.
1005(2512)
0.102(2.60)
0.095(2.40)
0.051(1.30)
0.043(1.10)
Mechanical data
Case: 1005 (2512) Standard package ,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750, method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any.
Weight: 0.006 gram (approximately).
0.020(0.50) Typ.
0.035(0.90)
0.027(0.70)
0.012 (0.30) Typ.
0.020(0.50) Typ.
Dimensions in inches and (millimeter)
Maximum Rating ( at T A = 25 C unless otherwise noted )
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average forward current
Conditions
Symbol Min Typ Max Unit
VRRM
50 V
VR 45 V
Io 100 mA
Forward current , surge peak
8.3 ms single half sine-wave superimposed
on rate load ( JEDEC method )
IFSM
1000
mA
Power Dissipation
Storage temperature
Junction temperature
PD
TSTG
Tj
-40
-40
250
+125
+125
mW
C
C
Electrical Characteristics ( at T A = 25 C unless otherwise noted )
Parameter
Conditions
Forward voltage
I F = 100 mADC
Reverse current
VR = 10 V
Capacitance between terminals f = 1MHz, and 10 VDC reverse voltage
Symbol Min Typ Max Unit
VF 0.55 V
IR 1 uA
CT 9 pF
QW-A1020
REV:A
Page 1
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet CDBF0145.PDF ] |
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