|
|
PDF CDBAF5819-G Data sheet ( Hoja de datos )
| Número de pieza | CDBAF5819-G | |
| Descripción | (CDBAF5817-G - CDBAF5819-G) SMD Schottky Barrier Rectifiers | |
| Fabricantes | Comchip Technology | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de CDBAF5819-G (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
|
No Preview Available !
SMD Schottky Barrier Rectifiers
SMD Diodes Specialist
CDBAF5817-G Thru CDBAF5819-G
Reverse Voltage: 20 - 40 Volts
Forward Current: 1A or 3A
RoHS Device
Features
For surface mounted applications.
Metal to silicon rectifier,majority carrier
conduction.
2010
Plastic package has Underwriters Lab,
flamability classification94V-0.
High surge capacity.
High current capability, low forward voltage.
0.002(0.05)
0.020(R0.50)
0.181(4.60)
0.173(4.40)
0.091(2.30)
0.083(2.10)
Mechanical data
Case: Packed with FRP substrate and
epoxy underfilled.
Terminals: Solderable per MIL-STD-750,
method 2026.
0. 04 5( 1. 15 )
0.029(0.75)
0. 04 5( 1. 15 )
0.029(0.75)
0. 04 6( 1. 16 )
0.034(0.86)
Polarity: Indicated by cathode band.
Weight: 0.02 gram(approx.).
Dimensions in inches and (millimeter)
Maximum Ratings(at TA=25OC unless otherwise noted)
Parameter
Symbol CDBAF5817-G CDBAF5818-G CDBAF5819-G Unit
Max. Repetitive Peak Reverse Voltage VRRM
20
30
40 V
Max. DC Bolcking Voltage
VDC
20
30
40 V
Max. RMS Voltage
VRMS
14
21
28 V
Peak Surge Forward Current
8.3ms single half sine-wave
suprimposed on rate load
(JEDEC method)
IFSM
30 A
Max. Average Forward Current
IO
1A
Typ ica l The rmal Res ist an ce (Not e 3)
St or ag e Temper at ur e
R JA
TSTG
80
-50 to +1 25
O
C/ W
O
C
Max. Oper at ing Ju nc tion Temper at ur e
Tj
+1 25
O
C
Electrical Characteristics (at TA=25OC unless otherwise noted)
Parameter
Symbol CDBAF5817-G CDBAF5818-G CDBAF5819-G Unit
Max. Forward Voltage at 1.0 A (Note 1)
at 3.0 A (Note 1)
Max. DC Reverse Current at Rated DC
Blocking Voltage
Tj = 25 OC
Tj = 100 OC
VF
IR
0.45
0.75
0.550
0.875
0.5
10
0.60
0.90
V
mA
Typical Junction Capacitance (Note 2)
Cj
Notes: (1) Pulse test width PW = 300usec, 1% duty cycle.
(2) Measured at 1.0 Mhz and applied reverse voltage of 4.0 Volts.
(3) Thermal Resistance Junction to Ambient.
QW-BB014
110
pF
REV:A
Page 1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet CDBAF5819-G.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| CDBAF5819-G | (CDBAF5817-G - CDBAF5819-G) SMD Schottky Barrier Rectifiers | Comchip Technology |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |