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PDF XN05553 Data sheet ( Hoja de datos )
| Número de pieza | XN05553 | |
| Descripción | Silicon NPN epitaxial planer transistor | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Composite Transistors
XN05553 (XN5553)
Silicon NPN epitaxial planer transistor
For amplification of the low frequency
I Features
G Two elements incorporated into one package.
G Reduction of the mounting area and assembly cost by one half.
I Basic Part Number of Element
G 2SD1149 × 2 elements
2.90+–00..0250
1.9±0.1
(0.95) (0.95)
456
32
0.30+–00..0150
0.50+–00..0150
10°
1
Unit: mm
0.16+–00..0160
I Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Rating Collector to emitter voltage
of Emitter to base voltage
element Collector current
www.DataSheet4U.com
Peak collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PT
Tj
Tstg
Ratings
100
100
15
20
50
300
150
–55 to +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
1 : Collector (Tr1)
2 : Emitter (Tr2)
3 : Collector (Tr2)
4 : Base (Tr2)
5 : Base (Tr1)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini6-G1 Package
Marking Symbol: 4U
Internal Connection
Tr1
6
1
52
43
Tr2
I Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
VCBO
VCEO
VEBO
ICBO
ICEO
hFE
VCE(sat)
IC = 10µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCB = 60V, IE = 0
VCE = 60V, IB = 0
VCE = 10V, IC = 2mA
IC = 10mA, IB = 1mA
Noise voltage
NV VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100KΩ, Function = FLAT
Transition frequency
fT VCB = 10V, IE = –2mA, f = 200MHz
min
100
100
15
400
typ max Unit
V
V
V
0.1 µA
1.0 µA
2000
0.05 0.2
V
80 mV
150 MHz
Note) The Part number in the Parenthesis shows conventional part number.
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet XN05553.PDF ] | |
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