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PDF 908E621 Datasheet ( Hoja de datos )

Número de pieza 908E621
Descripción Integrated Quad Half-Bridge and Triple High-Side
Fabricantes Freescale Semiconductor 
Logotipo Freescale Semiconductor Logotipo
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908E621 datasheet

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908E621 pdf
PIN CONNECTIONS
Table 1. Pin Definitions (continued)
A functional description of each pin can be found in the Functional Pin Description section beginning on page 19.
Die Pin
Pin Name
Formal Name
Definition
Analog
43
VSS
Voltage Regulator Ground pin for the connection of all non-power ground connections
Ground
(microcontroller and sensors).
EP
Exposed Pad
Exposed Pad
The exposed pad pin on the bottom side of the package conducts heat
from the chip to the PCB board.
Analog Integrated Circuit Device Data
Freescale Semiconductor
908E621
5

5 Page

908E621 arduino
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued)
All characteristics are for the analog chip only. Refer to the 68HC908EY16 datasheet for characteristics of the microcontroller
chip. Characteristics noted under conditions 9.0 V VSUP 16 V, -40 °C TJ 125 °C, unless otherwise noted. Typical values
noted reflect the approximate parameter mean at TA = 25 °C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max Unit
LIN PHYSICAL LAYER
LIN Transceiver Output Voltage
Recessive State, TXD HIGH, IOUT = 1.0 μA
Dominant State, TXD LOW, 500 Ω External Pull-up Resistor
V LIN_REC
V LIN_DOM
Normal Mode Pull-up Resistor to VSUP
R PU
Stop, Sleep Mode Pull-up Current Source
IPU
Output Current Shutdown Threshold
IBLIM
Output Current Shutdown Timing
IBLS
Leakage Current to GND
VSUP Disconnected, VBUS at 18 V
Recessive state, 8.0 V VSUP 18 V, 8.0 V VBUS 18 V, VBUS VSUP
GND Disconnected, VGND = VSUP, VBUS at -18 V
IBUS
IBUS-PAS-REC
IBUS-NOGND
LIN Receiver
Receiver Threshold Dominant
Receiver Threshold Recessive
Receiver Threshold Center
Receiver Threshold Hysteresis
VBUS_DOM
VBUS_REC
VBUS_CNT
VBUS_HYS
HIGH SIDE OUTPUT HS1
VSUP -1
20
100
5.0
0.0
-1.0
0.6
0.475
30
20
230
1.0
3.0
0.5
V
1.4
47 kΩ
μA
280 mA
40 µs
10
20
1.0
0.4
0.525
0.175
µA
µA
mA
VSUP
Switch On Resistance
TJ = 25 °C, ILOAD = 1.0 A
Over-current Shutdown
Over-current Shutdown blanking time(14)
Current to Voltage Ratio(15)
VADOUT [V] / IHS [A], (measured and trimmed IHS = 2.0 A)
RDS(ON)-HS1
mΩ
185 225
IHSOC1
6.0
9.0 A
tOCB
– 4-8 – µs
CRRATIOHS1
0.84
1.2
1.56 V/A
High Side Switching Frequency(14)
fPWMHS
– 25 kHz
High Side Freewheeling Diode Forward Voltage
TJ = 25 °C, ILOAD = 1.0 A
VHSF
– 0.9 – V
Leakage Current
ILeakHS
Notes
14. This parameter is guaranteed by process monitoring but is not production tested.
15. This parameter is guaranteed only if correct trimming was applied.
– <0.2 10 µA
908E621
10
Analog Integrated Circuit Device Data
Freescale Semiconductor

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