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PDF 908E621 Datasheet ( Hoja de datos )

Número de pieza 908E621
Descripción Integrated Quad Half-Bridge and Triple High-Side
Fabricantes Freescale Semiconductor 
Logotipo Freescale Semiconductor Logotipo

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908E621 Hoja de datos, Descripción, Manual
Freescale Semiconductor
Technical Data
Integrated Quad Half-bridge and
Triple High Side with Embedded
MCU and LIN for High End
Mirror
The 908E621 is an integrated single package solution that
includes a high performance HC08 microcontroller with a
SMARTMOS analog control IC. The HC08 includes flash memory, a
timer, enhanced serial communications interface (ESCI), a 10 bit
analog-to-digital converter (ADC), internal serial peripheral interface
(SPI), and an internal clock generator module (ICG). The analog
control die provides four half-bridge and three high side outputs with
diagnostic functions, a Hall effect sensor input, analog inputs, voltage
regulator, window watchdog, and local interconnect network (LIN)
physical layer.
The single package solution, together with LIN, provides optimal
application performance adjustments and space saving PCB design.
It is well-suited for the control of automotive high end mirrors.
Features
• High performance M68HC908EY16 core
• 16 KB of on-chip flash memory, 512 B of RAM
• Two 16-bit, two-channel timers
• LIN physical layer interface
• Autonomous MCU watchdog / MCU supervision
• One analog input with switchable current source
• Four low RDS(ON) half-bridge outputs
• Three low RDS(ON) high side outputs
• Wake-up and 2 or 3-pin Hall effect sensor input
• 12 microcontroller I/Os
• Pb-free packaging designated by suffix codes EK
Document Number: MM908E621
Rev. 6.0, 4/2012
908E621
QUAD HALF-BRIDGE AND TRIPLE HIGH SIDE
SWITCH WITH EMBEDDED MCU AND LIN
EK (Pb-Free)
98ASA10712D
54-PIN SOICW-EP
ORDERING INFORMATION
Device
(Add an R2 suffix for
Tape and reel orders)
Temperature
Range (TA)
Package
MM908E621ACPEK
-40 to 85°C 54 SOICW-EP
100 nF
4.7 μF
μC PortA
μC PortB
μC PortC
μC PortD
μC PortE
Internally Connected
Internally Connected
LIN VSP1:8]
VDDA/VREFH
L0
EVDD
VDD
HB1
VSSA/VREFL
EVSS
VSS
908E621
HB2
HB3
RST A
RST
HB4
IRQ A
IRQ
HS1
PTA/KBD0
PTA1/KBD1
HS2
PTA2/KBD2
PTA3/KBD3
HS3
PTA4/KBD4
HVDD
PTB3/AD3
A0
PTB4/AD4
PTB5/AD5
A0CST
PTC2/MCLK
H0
PTC3/OSC2
PTC4/OSC1
TESTMODE
PTD0/TACH0
PTD1/TACH1
PTE1/RXD
EP
GND[1:4]
>22 μF
Wake-up Input
100 nF
M
M 4 x Half-brideOutputs
M
High Side Output 1
High Side Output 2
High Side Output 3
Switched 5.0 V Output
Analog Input with Curet Source
Analog Input Current Source Trim
Two 3-pin Hall Sensor Input
Pull to GND for User Mode
Figure 1. 908E621 Simplified Application Diagram
Freescale Semiconductor, Inc. reserves the right to change the detail specifications,
as may be required, to permit improvements in the design of its products.
© Freescale Semiconductor, Inc., 2007-2012. All rights reserved.

1 page

908E621 pdf
PIN CONNECTIONS
Table 1. Pin Definitions (continued)
A functional description of each pin can be found in the Functional Pin Description section beginning on page 19.
Die Pin
Pin Name
Formal Name
Definition
Analog
43
VSS
Voltage Regulator Ground pin for the connection of all non-power ground connections
Ground
(microcontroller and sensors).
EP
Exposed Pad
Exposed Pad
The exposed pad pin on the bottom side of the package conducts heat
from the chip to the PCB board.
Analog Integrated Circuit Device Data
Freescale Semiconductor
908E621
5

5 Page

908E621 arduino
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued)
All characteristics are for the analog chip only. Refer to the 68HC908EY16 datasheet for characteristics of the microcontroller
chip. Characteristics noted under conditions 9.0 V VSUP 16 V, -40 °C TJ 125 °C, unless otherwise noted. Typical values
noted reflect the approximate parameter mean at TA = 25 °C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max Unit
HIGH SIDE OUTPUTS HS2 AND HS3(18)
Switch On Resistance
TJ = 25 °C, ILOAD = 1.0 A
Over-current Shutdown
Over-current Shutdown blanking time(16)
Current to Voltage Ratio(17)
VADOUT [V] / IHS [A], (measured and trimmed IHS = 2.0 A)
RDS(ON)-HS23
IHSOC23
tOCB
CRRATIOHS23
3.6
1.16
440
4-8
1.66
mΩ
500
5.6 A
– µs
2.16 V/A
High Side Switching Frequency(16)
fPWMHS
– 25 kHz
High Side Freewheeling Diode Forward Voltage
TJ = 25 °C, ILOAD = 1.0 A
VHSF
– 0.9 – V
Leakage Current
HALF-BRIDGE OUTPUTS HB1 AND HB2
ILEAKHS – <0.2 10 µA
Switch On Resistance
High Side, TJ = 25°C, ILOAD = 1.0A
Low Side, TJ = 25°C, ILOAD = 1.0A
RDS(ON)-HB12
mΩ
750 900
750 900
Over-current Shutdown
High Side
Low Side
IHBOC12
A
1.0 – 1.5
1.0 – 1.5
Over-current Shutdown blanking time(19)
tOCB
– 4-8 – μs
Switching Frequency(19)
fPWM – – 25 kHz
Freewheeling Diode Forward Voltage
High Side, TJ = 25 °C, ILOAD = 1.0 A
Low Side, TJ = 25 °C, ILOAD = 1.0 A
VHSF
VLSF
V
– 0.9 –
– 0.9 –
Leakage Current
Low Side Current to Voltage Ratio(20)
VADOUT [V] / IHB [A], CSA = 1, (measured and trimmed IHB = 200 mA)
VADOUT [V] / IHB [A], CSA = 0, (measured and trimmed IHB = 500 mA)
ILEAKHB
CRRATIOHB12
17.5
3.5
<0.2
25.0
5.0
10 µA
V/A
32.5
6.5
Notes
16. This parameter is guaranteed by process monitoring but is not production tested.
17. This parameter is guaranteed only if correct trimming was applied.
18. The high side HS3 can be only used for resistive loads.
19. This parameter is guaranteed by process monitoring but is not production tested.
20. This parameter is guaranteed only if correct trimming was applied
Analog Integrated Circuit Device Data
Freescale Semiconductor
908E621
11

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