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PDF 908E621 Datasheet ( Hoja de datos )

Número de pieza 908E621
Descripción Integrated Quad Half-Bridge and Triple High-Side
Fabricantes Freescale Semiconductor 
Logotipo Freescale Semiconductor Logotipo
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908E621 datasheet

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908E621 pdf
PIN CONNECTIONS
Table 1. Pin Definitions (continued)
A functional description of each pin can be found in the Functional Pin Description section beginning on page 19.
Die Pin
Pin Name
Formal Name
Definition
Analog
43
VSS
Voltage Regulator Ground pin for the connection of all non-power ground connections
Ground
(microcontroller and sensors).
EP
Exposed Pad
Exposed Pad
The exposed pad pin on the bottom side of the package conducts heat
from the chip to the PCB board.
Analog Integrated Circuit Device Data
Freescale Semiconductor
908E621
5

5 Page

908E621 arduino
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued)
All characteristics are for the analog chip only. Refer to the 68HC908EY16 datasheet for characteristics of the microcontroller
chip. Characteristics noted under conditions 9.0 V VSUP 16 V, -40 °C TJ 125 °C, unless otherwise noted. Typical values
noted reflect the approximate parameter mean at TA = 25 °C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max Unit
HIGH SIDE OUTPUTS HS2 AND HS3(18)
Switch On Resistance
TJ = 25 °C, ILOAD = 1.0 A
Over-current Shutdown
Over-current Shutdown blanking time(16)
Current to Voltage Ratio(17)
VADOUT [V] / IHS [A], (measured and trimmed IHS = 2.0 A)
RDS(ON)-HS23
IHSOC23
tOCB
CRRATIOHS23
3.6
1.16
440
4-8
1.66
mΩ
500
5.6 A
– µs
2.16 V/A
High Side Switching Frequency(16)
fPWMHS
– 25 kHz
High Side Freewheeling Diode Forward Voltage
TJ = 25 °C, ILOAD = 1.0 A
VHSF
– 0.9 – V
Leakage Current
HALF-BRIDGE OUTPUTS HB1 AND HB2
ILEAKHS – <0.2 10 µA
Switch On Resistance
High Side, TJ = 25°C, ILOAD = 1.0A
Low Side, TJ = 25°C, ILOAD = 1.0A
RDS(ON)-HB12
mΩ
750 900
750 900
Over-current Shutdown
High Side
Low Side
IHBOC12
A
1.0 – 1.5
1.0 – 1.5
Over-current Shutdown blanking time(19)
tOCB
– 4-8 – μs
Switching Frequency(19)
fPWM – – 25 kHz
Freewheeling Diode Forward Voltage
High Side, TJ = 25 °C, ILOAD = 1.0 A
Low Side, TJ = 25 °C, ILOAD = 1.0 A
VHSF
VLSF
V
– 0.9 –
– 0.9 –
Leakage Current
Low Side Current to Voltage Ratio(20)
VADOUT [V] / IHB [A], CSA = 1, (measured and trimmed IHB = 200 mA)
VADOUT [V] / IHB [A], CSA = 0, (measured and trimmed IHB = 500 mA)
ILEAKHB
CRRATIOHB12
17.5
3.5
<0.2
25.0
5.0
10 µA
V/A
32.5
6.5
Notes
16. This parameter is guaranteed by process monitoring but is not production tested.
17. This parameter is guaranteed only if correct trimming was applied.
18. The high side HS3 can be only used for resistive loads.
19. This parameter is guaranteed by process monitoring but is not production tested.
20. This parameter is guaranteed only if correct trimming was applied
Analog Integrated Circuit Device Data
Freescale Semiconductor
908E621
11

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