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Número de pieza | KM416S8030BN | |
Descripción | 128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL | |
Fabricantes | Samsung semiconductor | |
Logotipo | ||
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shrink-TSOP
Preliminary
CMOS SDRAM
www.DataSheet4U.com
128Mb SDRAM
Shrink TSOP
2M x 16Bit x 4 Banks
Synchronous DRAM
LVTTL
Revision 0.1
Aug. 1999
Samsung Electronics reserves the right to change products or specification without notice.
Rev. 0.1 Aug. 1999
1 page KM416S8030BN
shrink-TSOP
Preliminary
CMOS SDRAM
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to Vss
Voltage on VDD supply relative to Vss
Storage temperature
Power dissipation
Short circuit current
Symbol
VIN, VOUT
VDD, VDDQ
TSTG
PD
IOS
Value
-1.0 ~ 4.6
-1.0 ~ 4.6
-55 ~ +150
1
50
Unit
V
V
°C
W
mA
Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70°C)
Parameter
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Symbol
VDD, VDDQ
VIH
VIL
VOH
VOL
ILI
Min
3.0
2.0
-0.3
2.4
-
-10
Typ Max
3.3 3.6
3.0 VDD+0.3
0 0.8
--
- 0.4
- 10
Unit
V
V
V
V
V
uA
Notes : 1. VIH (max) = 5.6V AC.The overshoot voltage duration is ≤ 3ns.
2. VIL (min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
3. Any input 0V ≤ VIN ≤ VDDQ,
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
Note
1
2
IOH = -2mA
IOL = 2mA
3
CAPACITANCE (VDD = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV)
Pin
Clock
RAS, CAS, WE, CS, CKE, DQM
Address
DQ0 ~ DQ15
Symbol
CCLK
CIN
CADD
COUT
Min
2.5
2.5
2.5
4.0
Max
4.0
5.0
5.0
6.5
Unit
pF
pF
pF
pF
Note
1
2
2
3
Rev. 0.1 Aug. 1999
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet KM416S8030BN.PDF ] |
Número de pieza | Descripción | Fabricantes |
KM416S8030B | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor |
KM416S8030BN | 128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor |
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