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PDF IRFIZ44NPBF Data sheet ( Hoja de datos )
| Número de pieza | IRFIZ44NPBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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l Advanced Process Technology
l Isolated Package
l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated
l Lead-Free
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
PD - 94836
IRFIZ44NPbF
HEXFET® Power MOSFET
D VDSS = 55V
RDS(on) = 0.024Ω
ID = 31A
S
TO-220 FULLPAK
Max.
31
22
160
45
0.3
± 20
210
25
4.5
5.0
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
Typ.
Max.
3.3
65
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
11/13/03
1 page  
35
30
25
20
15
10
5
0
25
50 75 100 125 150
TC , Case Temperature ( °C)
175
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
IRFIZ44NPbF
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0.50
1
0.20
0.10
0.05
0.1 0.02
0.01
0.01
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
0.0001
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.01
t1, Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRFIZ44NPBF.PDF ] | |
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