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PDF IRF9Z30PBF Data sheet ( Hoja de datos )
| Número de pieza | IRF9Z30PBF | |
| Descripción | HEXFET POWER MOSFET | |
| Fabricantes | International Rectifier | |
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PD- 96095
Features
P-Channel Verasatility
Compact Plastic Package
Fast Switching
Low Drive Current
Ease of Paralleling
Excellent Temperature Stability
Lead-Free
IRF9Z30PbF
HEXFET® POWER MOSFET
Product Summary
Part Number VDS(V)
IRF9Z30PbF
-50
RDSON (Ω)
0.14
ID (A)
-18
D
G
Description
S TO-220AB
The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient
geometry and unique processing of the HEXFET design achieve very low on-state resistence combined with high
transconductance and extreme device ruggedness.
The P-Channel HEXFETs are designed for applications which require the convenience of reverse polarity operation. They
retain all of the features of the more common N-Channel HEXFETs such as voltage control, very fast switching, ease of
paralleling, and excellent temperature stability.
P-Channel HEXFETs are intended for use in power stages where complementary symmetry with N-Channel devices offers
circuit simplification. They are also very useful in drive stages because of the circuit versatility offered by the reverse polarity
connection. Applications include motor control, audio amplifiers, switched mode converters, control circuit and pulse
amplifiers.
Absolute Maximum Ratings
VDS
VDGR
VGS
Drain-to-Source Voltage
Parameter
Drain-to-Gate Voltage (RGS =20KΩ)
Gate-to-Source Voltage
Max.
-50
-50
±20
Units
V
ID @ TC = 25°C
Continuous Drain Current, VGS
-18
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS
Pulsed Drain Current
-11 A
-60
PD @TC = 25°C Max. Power Dissipation
74 W
ILM
IL
TJ
TSTG
Lead Temperature
Linear Derating Factor
Inductive Current, Clamped (L= 100µH) See Fig. 14
Unclamped Inductive Current(Avalanche Current)
See Fig. 15
Operating Junction and
Storage Temperature Range
300 (0.063 in. (1.6mm) from case for 10s)
0.59
-60
-3.1
-55 to + 150
W/°C
A
°C
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
www.irf.com
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
1.0
–––
Max.
1.7
–––
80
Units
°C/W
1
03/27/07
1 page  
IRF9Z30PbF
www.irf.com
5
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| PDF Descargar | [ Datasheet IRF9Z30PBF.PDF ] | |
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