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PDF IRF7335D1 Data sheet ( Hoja de datos )

Número de pieza IRF7335D1
Descripción Dual FETKY CO-PACKAGED DUAL MOSFET PLUS SCHOTTKY DIODE
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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PD- 94546
IRF7335D1
• Co-Pack Dual N-channel HEXFETPower MOSFET
and Schottky Diode
Dual FETKY™
• Ideal for Synchronous Buck DC-DC
Converters Up to 11A Peak Output
Co-Packaged Dual MOSFET Plus Schottky Diode
• Low Conduction Losses
• Low Switching Losses
Device Ratings (Typ.Values)
• Low Vf Schottky Rectifier
Q1 Q2
D1 1
D1 2
G1 3
G2 4
S2 5
S2 6
S2 7
Q1
Q2
14 S1, D2
13 S1, D2
12 S1, D2
11 S1, D2
10 S1, D2
9 S1, D2
8 S1, D2
R
DS(on)
Q
G
Qsw
VSD
and Schottky
13.4 m9.6 m
13 nC
18 nC
5.5 nC 6.4 nC
1.0V
0.43V
Description
The FETKYfamily of Co-Pack HEXFETMOSFETs and Schottky diodes offers the designer an innovative,
board space saving solution for switching regulator and power management applications. Advanced
HEXFETMOSFETs combined with low forward drop Schottky results in an extremely efficient device suitable
for a wide variety of portable electronics applications.
The SO-14 has been modified through a customized leadframe for enhanced thermal characteristics and
multiple die capability making it ideal in a variety of power applications. With these improvements multiple
devices can be used in an application with dramatically reduced board space. Internal connections enable
easier board layout design with reduced stray inductance.
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
EAS (6 sigma)
TJ
TSTG
Parameter
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V„
Continuous Drain Current, VGS @ 10V„
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipationƒ
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy …
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
30
10
8.1
81
2.0
1.3
0.02
± 12
50
-55 to + 150
300 (1.6mm from case )
Units
V
A
W
W/°C
V
mJ
°C
Thermal Resistance
Symbol
RθJL
RθJA
Notes 
Parameter
Junction-to-Drain Lead
Junction-to-Ambient ƒ
through … are on page 12
Typ.
Max.
20
62.5
Units
°C/W
9/11/02

1 page




IRF7335D1 pdf
Q1 - Control FET
Typical Characteristics
IRF7335D1
Q2 - Synchronous FET & Schottky
2500
2000
1500
VGS = 0V, f = 1 MHZ
C iss = C gs + C gd , C ds
SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ci s s
1000
500
Coss
Crs s
0
1 10
100
VDS, Drain-to-Source Voltage (V)
Fig 13. Typical Capacitance Vs.Drain-to-Source Voltage
12
ID= 8.0A
10
VDS= 24V
VDS= 15V
8
6
4
2
0
0 5 10 15 20 25 30
QG Total Gate Charge (nC)
Fig. 15. Gate-to-Source Voltage vs Typical Gate Charge
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
4000
3500
3000
2500
2000
VGS = 0V, f = 1 MHZ
C iss
= Cgs + Cgd ,
SHORTED
Crss = Cgd
Coss = Cds + Cgd
C ds
Ciss
1500
1000
500
0
1
Coss
Crss
10
100
VDS, Drain-to-Source Voltage (V)
Fig 14. Typical Capacitance Vs.Drain-to-Source Voltage
12
ID= 8.0A
10
VDS= 24V
VDS= 15V
8
6
4
2
0
0 5 10 15 20 25 30
QG Total Gate Charge (nC)
Fig. 16. Gate-to-Source Voltage vs Typical Gate Charge
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
10 100µsec
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0.1 1.0
10msec
10.0
100.0 1000.0
VDS , Drain-toSource Voltage (V)
Fig 17. Maximum Safe Operating Area
www.irf.com
10 100µsec
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0.1 1.0
10msec
10.0
100.0 1000.0
VDS , Drain-toSource Voltage (V)
Fig 18. Maximum Safe Operating Area
5

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IRF7335D1 arduino
SO-14 Package Details
IRF7335D1
SO-14 Part Marking
www.irf.com
11

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