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PDF B4S-G Data sheet ( Hoja de datos )

Número de pieza B4S-G
Descripción Silicon General Purpose Bridge Rectifier
Fabricantes Comchip Technology 
Logotipo Comchip Technology Logotipo



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No Preview Available ! B4S-G Hoja de datos, Descripción, Manual

Silicon General Purpose Bridge Rectifier
B05S-G thru B10S-G
Glass Passivated Type
Reverse Voltage: 50 ~ 1000 Volts
Forward Current: 0.5 Amp
Features:
Ideal for surface mount applications
Easy pick and place
Plastic package has Underwriters Lab.
Flammability classification 94V-0
Built-in strain relief
Glass passicated junction
Mechanical Data:
Case: JEDEC DO-269AA molded plastic
Terminals: solderable per MIL-STD-750, Method 2026
Polarity: Marked on body
Mounting position: Any
Approx. Weight: 0.22gram
TO-269AA
-+
.165 (4.2)
.150 (3.8)
--
.008 (0.2)
.031 (0.8)
.019 (0.5)
.193 (4.9)
.177 (4.5)
.275 (7.0)
MAX.
.043 (1.1)
.027 (0.7)
.106 (2.7)
.090 (2.3)
.106 (2.7)
.090 (2.3)
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Maximum Ratings and Electrical Characteristics
Dimmension in inches and (millimeters)
Parameter
Symbol B05S-G B1S-G B2S-G B4S-G B6S-G B8S-G B10S-G
Max. Repetitive Peak Reverse Voltage
Max. DC Blocking Voltage
Max. RMS Voltage
Peak Surge Forward Current
8.3ms single half sine-wave
superimposed on rate load
(JEDEC method)
VRRM 50 100 200 400 600 800 1000
VDC
50 100 200 400 600 800 1000
VRMS 35 70 140 280 420 560 700
IFSM
30
Max. Average Forward Current
Max. Instantaneous Forward Current
at 0.5A
Io
VF
0.5
1.0
Max. DC Reverse Current at Rated DC
Blocking Voltage
Ta=25ºC
Ta=125ºC
IR
5
500
Max. Thermal Resistance (Note 1)
RθJA
85
Operating Junction Temperature
Tj
-55 to +150
Storage Temperature
TSTG
-55 to +150
Unit
V
V
V
A
A
V
uA
ºC/W
ºC
ºC
Note1: Thermal resistance from junction to ambient.
“-G” suffix designated RoHS compliant version
Comhip Technology Corporation . Tel:510-657-8671 . Fax: 510-657-8921 . www.comchiptech.com
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