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PDF 2N6660X Data sheet ( Hoja de datos )
| Número de pieza | 2N6660X | |
| Descripción | N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR | |
| Fabricantes | Seme LAB | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N6660X (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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2N6660X
MECHANICAL DATA
Dimensions in mm (inches)
4.19 (0.165)
4.95 (0.195)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
12.70
(0.500)
min.
0.89 max.
(0.035)
7.75 (0.305)
8.51 (0.335)
dia.
5.08 (0.200)
typ.
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0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2
13
2.54
(0.100)
45˚
TO–39 METAL PACKAGE
Underside View
PIN 1 – Source
PIN 2 – Gate
PIN 3 – Drain
CASE – Drain
N–CHANNEL
ENHANCEMENT MODE
MOS TRANSISTOR
FEATURES
• Switching Regulators
• Converters
• Motor Drivers
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C unless otherwise stated)
VDS Drain – Source Voltage
60V
VGS Gate – Source Voltage
±40V
ID
Continuous Drain Current
@ TCASE = 25°C
±1.1A
ID
Continuous Drain Current
@ TCASE = 100°C
±0.8A
IDM Pulsed Drain Current *
±3A
PD Power Dissipation
@ TCASE = 25°C
6.25W
PD Power Dissipation
@ TCASE = 100°C
2.5W
Tj Operating Junction Temperature Range
–55 to 150°C
Tstg Storage Temperature Range
TL Lead Temperature (1/16” from case for 10 sec.)
–55 to 150°C
300°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
DOC: 7083 iss 1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N6660X.PDF ] | |
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