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PDF IRLIZ24N Data sheet ( Hoja de datos )
| Número de pieza | IRLIZ24N | |
| Descripción | HEXFET POWER MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 9.1344
HEXFET® Power MOSFET
PRELIMINARY
l Logic-Level Gate Drive
l Advanced Process Technology
l Isolated Package
l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design for which HEXFET Power MOSFETs are
well known, provides the designer with an extremely
efficient device for use in a wide variety of applications.
IRLIZ24N
D
VDSS = 55V
RDS(on) = 0.06Ω
S ID = 14A
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
www.DaTtaShheeet4mU.coomulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Current
Peak Diode Recovery dv/dt
TJ Operating Junction and
T STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
To Order
Min.
––––
––––
TO-220 FULLPAK
Max.
14
9.9
72
26
0.17
±20
68
11
4.5
4.6
-55 to + 175
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Typ.
––––
––––
Max.
5.8
65
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
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14
12
10
8
6
4
2
0
25
50 75 100 125 150
TC, Case Temperature (°C)
A
175
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
VDS
VGS
RG
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
IRLIZ24N
RD
D.U.T.
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0.50
0.20
1
0.10
0.05
0.02
0.01
0.1
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
0.0001
PD M
t1
t2
Notes:
1. Duty factor D = t1 / t2
2. Peak TJ = PDM x Z thJC + T C
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
A
10
To Order
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRLIZ24N.PDF ] | |
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