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PDF IRF7379PBF Data sheet ( Hoja de datos )

Número de pieza IRF7379PBF
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRF7379PBF Hoja de datos, Descripción, Manual

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PD - 95300
IRF7379PbF
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l Complimentary Half Bridge
l Surface Mount
l Fully Avalanche Rated
l Lead-Free
Description
N-CHANNEL MOSFET
S1 1
8 D1
N-Ch P-Ch
G1 2
S2 3
7 D1 VDSS 30V -30V
6 D2
G2 4
5 D2
P-CHANNEL MOSFET
RDS(on) 0.0450.090
Top View
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
SO-8
Absolute Maximum Ratings
VSD
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
Parameter
Drain-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Thermal Resistance Ratings
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambient„
Max.
N-Channel
P-Channel
30 -30
5.8 -4.3
4.6 -3.4
46 -34
2.5
0.02
± 20
5.0 -5.0
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
Max.
50
Units
°C/W
1
10/7/04

1 page




IRF7379PBF pdf
N-Channel
IRF7379PbF
1000
800
600
400
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + C gd
Ciss
Coss
20 IVDDS==2.244AV
16
12
8
200 Crss
0A
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Vs.
Drain-to-Source Voltage
4
FOR TEST CIRCUIT
SEE FIGURE 11
0A
0 5 10 15 20 25
QG , Total Gate Charge (nC)
Fig 9. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01 0.1
1
t1 , Rectangular Pulse Duration (sec)
10
100
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
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