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PDF GB10RF120K Data sheet ( Hoja de datos )
| Número de pieza | GB10RF120K | |
| Descripción | IGBT PIM MODULE | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de GB10RF120K (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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IGBT PIM MODULE
Features
• Low VCE (on) Non Punch Through IGBT Technology
• Low Diode VF
• 10μs Short Circuit Capability
• Square RBSOA
• HEXFRED Antiparallel Diode with Ultrasoft
Reverse Recovery Characteristics
• Positive VCE (on) Temperature Coefficient
• Ceramic DBC Substrate
• Low Stray Inductance Design
• TOTALLY LEAD-FREE
Benefits
• Benchmark Efficiency for Motor Control
• Rugged Transient Performance
• Low EMI, Requires Less Snubbing
• Direct Mounting to Heatsink
• PCB Solderable Terminals
• Low Junction to Case Thermal Resistance
• UL Approved E78996
www.DataSheet4U.com
Absolute Maximum Ratings
Inverter
Parameter
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
Collector Current
Input Rectifier
Brake
Diode Maximum Forward Current
Power Dissipation
Repetitive Peak Reverse Voltage
Average Output Current
Surge Current (Non Repetitive)
I2 t (Non Repetitive)
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
Collector Current
Power Dissipation
Maximum Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Thermal and Mechanical Characteristics
Parameter
Junction-to-Case Inverter IGBT Thermal Resistance
Junction-to-Case Inverter FRED Thermal Resistance
Junction-to-Case Brake DIODE Thermal Resistance
Junction-to-Case Brake IGBT Thermal Resistance
Junction-to-Case Input Rectifier Thermal Resistance
Case-to-Sink, flat, greased surface
Mounting Torque (M5)
Weight
1
ECONO2 PIM
Bulletin I27278 01/07
GB10RF120K
VCES = 1200V
IC = 13A @ TC=80°C
tsc > 10μs @ TJ =150°C
VCE(on) typ. = 2.68V
R
23
24
Symbol
VCES
VGES
IC
ICM
IFM
PD
VRRM
IF(AV)
IFSM
I2t
VCES
VGES
IC
ICM
PD
TJ
TSTG
VISOL
Test Conditions
Continuos
Pulsed
Pulsed
One IGBT
25°C / 80°C
25°C
25°C
25°C
50/60Hz sine pulse
80°C
Rated VRRM applied, 10ms,
sine pulse
Continuous
Pulsed
One IGBT
25°C / 80°C
25°C
25°C
AC (1 min)
Ratings
1200
±20
20 / 13
40
40
88
1600
13
120
72
1200
±20
20 / 13
40
88
150
-40 to +125
2500
Units
V
A
W
V
A
A2s
V
A
W
°C
V
Symbol
Min
Typical
Maximum Units
-
-
1.42
°C/W
- - 1.97
RθJC
-
-
- 1.97
- 1.42
- - 1.11
RθCS
-
2.7
0.05
-
-
3.3 Nm
170 g
www.irf.com
1 page  
GB10RF120K
Bulletin I27278 11/06
Inverter
35
Rg=4.7Ω
30 Rg=10Ω
Rg=22Ω
25 Rg=33Ω
Rg=47Ω
20
35
30
25
20
15 15
10 10
55
0
0 5 10 15 20 25
If (A)
Fig. 13 - Typical Diode IRR vs. IF
TJ = 125°C
35
0
0 10 20 30 40 50
Rg (Ω )
Fig. 14 - Typical Diode IRR vs. RG
TJ = 125°C; IF = 10A
Thermistor
14
30 12
25 10
20 8
15 6
10 4
52
0
400 500 600 700 800 900 1000
dif/dt (A/µs)
Fig. 15- Typical Diode IRR vs. diF/dt; VCC= 600V;
VGE= 15V; ICE= 10A; TJ = 125°C
0
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig. 16 - Thermistor Resistance vs. Temperature
Input Rectifier
90
80
70 TJ = 125°C
60 TJ = 25°C
50
40
30
20
10
0
0.0 0.5 1.0 1.5 2.0 2.5
Forward Voltage Drop - V F ( V )
Fig. 17- Typ. Diode Forward Characteristics
tp = 80μs
6 www.irf.com
5 Page 
GB10RF120K
Bulletin I27278 11/06
VGE
1mA
R
=
VCC
ICM
+
VCC
-
IC
diode clamp/
DUT
-+
5V
L
DUT/
DRIVER
RG
+
VCC
-
Fig.C.T.1 - Gate Charge Circuit (turn-off)
DUT
RG
+
VCC
-
Fig.C.T.2 - RBSOA Circuit
diode clamp/
DUT
-+
5V
L
DUT/
DRIVER
RG
+
VCC
-
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
R
=
VCC
ICM
DUT
+ VCC
-
RG
Fig.C.T.5 - Resistive Load Circuit
12 www.irf.com
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet GB10RF120K.PDF ] | |
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