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PDF FMMT5551 Data sheet ( Hoja de datos )
| Número de pieza | FMMT5551 | |
| Descripción | (FMMT5550 / FMMT5551) SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTORS | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de FMMT5551 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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SOT23 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTORS
ISSUE 4 - NOVEMBER 1996 7
PARTMARKING DETAILS - FMMT5550 1FZ
FMMT5551 ZG1
COMPLEMENTARY TYPES - FMMT5550 FMMT5400
FMMT5551 FMMT5401
FMMT5550
FMMT5551
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
VCBO
VCEO
VEBO
IC
Ptot
Tj:Tstg
FMMT5550 FMMT5551
160 180
140 160
66
600 600
330 330
-55 to +150
UNIT
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
FMMT5550 FMMT5551
PARAMETER
SYMBOL MIN. MAX. MIN. MAX. UNIT
Collector-Base
V(BR)CBO
Breakdown Voltage
160
180 V
Collector-Emitter
V(BR)CEO
Breakdown Voltage
140
160 V
Emitter-Base
V(BR)EBO
Breakdown Voltage
6
6V
Collector Cut-Off
Current
ICBO
100 nA
100 µA
50 nA
50 µA
Static Forward
Current Transfer
Ratio
hFE
60 80
60 250 80 250
20 30
Collector-Emitter
VCE(sat)
Saturation Voltage
0.15 0.15 V
0.25 0.20 V
Base-Emitter
VBE(sat)
Saturation Voltage
1.0 1.0 V
1.2 1.2 V
Transition fT 100 300 100 300 MHz
Frequency
Output Capacitance Cobo
Small Signal
hfe
6.0 6.0 pF
50 200 50 260
Noise Figure
NF
10 8 dB
Periodic Sample Test Only
PAGE NUMBER
CONDITIONS.
IC=100µA
IC=1mA
IE=10µA*
VCB=100V
VCB=100V, TA=100°C
VCB=120V
VCB=120V, TA=100°C
IC=1mA, VCE=5V
IC=10mA, VCE=5V
IC=50mA, VCE=5V
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, VCE=10V
f=100MHz
VCB=10V, f=1MHz
IC=1mA, VCE=10V
f=1KHz
IC=250µA, VCE=5V,
RS=1KΩ
f=10Hz to 15.7KHz
.
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet FMMT5551.PDF ] | |
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