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PDF ZXMHC10A07T8 Datasheet ( Hoja de datos )

Número de pieza ZXMHC10A07T8
Descripción COMPLEMENTARY 100V ENHANCEMENT MODE MOSFET H-BRIDGE
Fabricantes Zetex Semiconductors 
Logotipo Zetex Semiconductors Logotipo

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ZXMHC10A07T8 Hoja de datos, Descripción, Manual
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ZXMHC10A07T8
COMPLEMENTARY 100V ENHANCEMENT MODE MOSFET H-BRIDGE
SUMMARY
N-Channel = V(BR)DSS = 100V : RDS(on) = 0.7 ; ID = 1.4A
P-Channel = V(BR)DSS = -100V : RDS(on) = 1.0 ; ID = -1.3A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Single SM-8 Surface Mount Package
APPLICATIONS
Single Phase DC Fan Motor Drive
S1
G1
D1, D2
G2
S2
ORDERING INFORMATION
DEVICE
REEL TAPE QUANTITY
SIZE WIDTH PER REEL
ZXMHC10A07T8TA 7” 12mm 1000 units
ZXMHC10A07T8TC 13” 12mm 4000 units
DEVICE MARKING
ZXMH
C10A7
SM8
S4
G4
D3, D4
G3
S3
PINOUT
ISSUE 2 - JUNE 2005
1 SEMICONDUCTORS

1 page

ZXMHC10A07T8 pdf
ZXMHC10A07T8
P-Channel
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance (1)
Forward Transconductance (1) (3)
DYNAMIC (3)
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
gfs
-100
V ID= -250A, VGS=0V
-1.0 A VDS= -100V, VGS=0V
100 nA VGS=±20V, VDS=0V
-2.0 -4.0 V ID= -250A, VDS=VGS
1 VGS= -10V, ID= - 0.6A
1.45 VGS= -6V, ID= -0.5A
1.2 S VDS= -15V, ID= -0.6A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Ciss
Coss
Crss
141
13.1
10.8
pF
pF VDS= -50V, VGS=0V
f=1MHz
pF
Turn-On-Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
VSD
trr
Qrr
1.6 ns
2.1 ns VDD= -50V, ID= -1A
5.9 ns RG 6.0, VGS= -10V
3.3 ns
1.6 nC VDS= -50V, VGS= -5V
ID= -0.6A
3.5 nC
0.6 nC VDS= -50V, VGS= -10V
ID= -0.6A
1.6 nC
-0.85
29
31
-0.95
V Tj=25°C, IS= -0.75A,
VGS=0V
ns Tj=25°C, IS= -0.9A,
nC di/dt=100A/s
NOTES
(1) Measured under pulsed conditions. Pulse width Յ 300s; duty cycle Յ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 2 - JUNE 2005
5 SEMICONDUCTORS

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