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PDF ZXTN25040DZ Data sheet ( Hoja de datos )
| Número de pieza | ZXTN25040DZ | |
| Descripción | NPN medium power transistor | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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ZXTN25040DZ
40V, SOT89, NPN medium power transistor
www.DataSheet4U.com
Summary
BVCEX > 130V
BVCEO > 40V
BVECO > 6V
IC(cont) = 5A
VCE(sat) < 60mV @ 1A
RCE(sat) = 38m⍀
PD = 2.4W
Complementary part number ZXTP25040DZ
Description
Packaged in the SOT89 outline this new low saturation 40V NPN
transistor offers extremely low on state losses making it ideal for use in
DC-DC circuits and various driving and power management functions.
Features
• Extremely low equivalent on resistance; RCE(sat) = 36m⍀ at 5A
• 5A continuous current
• Up to 10 amps peak current
• Very low saturation voltages
• Excellent hFE characteristics
• 6V reverse blocking capability
Applications
• Emergency lighting circuits
• Motor driving (including DC fans)
• Solenoid, relay and actuator drivers
• DC-DC modules
• Backlight inverters
• Power switches
• MOSFET gate drivers
Ordering information
C
B
E
E
CC
B
Pinout - top view
Device
ZXTN25040DZTA
Device marking
1C8
Reel size
(inches)
7
Tape width
(mm)
12
Quantity per reel
1000
Issue 2 - January 2007
© Zetex Semiconductors plc 2007
1
www.zetex.com
1 page  
ZXTN25040DZ
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown
voltage
BVCBO
130 170
V IC = 100A
Collector-emitter breakdown BVCEX
voltage (forward blocking)
130 170
V VCE = 130V; RBE Յ 1k⍀ or
-1V < VBE < 0.25V
Collector-emitter breakdown BVCEO 40 63
voltage (base open)
V IC = 10mA (*)
Emitter-base breakdown voltage BVEBO 7 8.3
V IE = 100A
Emitter-collector breakdown BVECX 6 7.4
voltage (reverse blocking)
V IE = 100A, RBC Յ 1k⍀ or
0.25V > VBC > -0.25V
Emitter-collector breakdown BVECO 6 7.4
voltage (base open)
V IE = 100A,
Collector-base cut-off current ICBO
<1 50 nA VCB = 100V
20 A VCB = 100V, Tamb= 100°C
Collector-emitter cut-off
current
ICEX
- 100 nA VCE = 100V; RBE Յ 1k⍀ or
-1V < VBE < 0.25V
Emitter-base cut-off current IEBO
<1 50 nA VEB = 5.6V
Collector-emitter saturation VCE(sat)
voltage
50 60 mV IC = 1A, IB = 100mA(*)
125 215 mV IC = 1A, IB = 10mA(*)
140 215 mV IC = 2A, IB = 40mA(*)
190 260 mV IC = 5A, IB = 500mA(*)
Base-emitter saturation voltage VBE(sat)
1000 1100 mV IC = 5A, IB = 500mA(*)
Base-emitter turn-on voltage VBE(on)
910 1000 mV IC = 5A, VCE = 2V(*)
Static forward current
transfer ratio
hFE 300 450 900
300 450
IC = 10mA, VCE = 2V(*)
IC = 1A, VCE = 2V(*)
20 40
IC = 5A, VCE = 2V(*)
10 IC = 10A, VCE = 2V(*)
Transition frequency
fT
190 MHz IC = 50mA, VCE = 10V
f = 100MHz
Output capacitance
Delay time
Rise time
Storage time
Fall time
COBO
td
tr
ts
tf
11.7 20
64
108
428
130
pF VCB = 10V, f = 1MHz(*)
ns VCC = 10V
ns IC = 1A,
ns IB1 = IB2= 10mA
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300s; duty cycle Յ2%.
Issue 2 - January 2007
© Zetex Semiconductors plc 2007
5
www.zetex.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet ZXTN25040DZ.PDF ] | |
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