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PDF ZXMP3A16N8 Data sheet ( Hoja de datos )
| Número de pieza | ZXMP3A16N8 | |
| Descripción | P-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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ZXMP3A16N8
30V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS = -30V; RDS(ON) = 0.040 ID = -6.7A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• Disconnect switches
• Motor control
ORDERING INFORMATION
DEVICE
ZXMP3A16N8TA
ZXMP3A16N8TC
REEL
SIZE
7”
13”
TAPE QUANTITY
WIDTH PER REEL
12mm 500 units
12mm 2500 units
DEVICE MARKING
• ZXMP
3A16
SO8
PINOUT
Top View
ISSUE 2 - MAY 2007
1
1 page  
CHARACTERISTICS
ZXMP3A16N8
T = 25°C
10
1
0.1
10V 4V
3.5V
3V
2.5V
2V
-V
GS
1.5V
0.01 0.1 1 10
-V Drain-Source Voltage (V)
DS
Output Characteristics
10
T = 150°C
1
T = 25°C
-V = 10V
DS
0.11 2 3
-VGS Gate-Source Voltage (V)
Typical Transfer Characteristics
100 1.5V
T = 25°C
-V
GS
2V
10
2.5V
3V
1 3.5V
4V
0.1
10V
0.001.01
0.1
1
10
-I Drain Current (A)
D
On-Resistance v Drain Current
T = 150°C
10
1
0.1
10V 4V 3.5V
3V
2.5V
2V
1.5V
-V
GS
0.01 0.1 1 10
-V Drain-Source Voltage (V)
DS
Output Characteristics
1.6
V = -10V
1.4
GS
I = -4.2A
D
1.2
R
DS(on)
1.0
V
0.8 GS(th)
V =V
0.6
GS DS
I = -250uA
D
0.4-50
0
50 100 150
Tj Junction Temperature (°C)
Normalised Curves v Temperature
100
T = 150°C
10
1 T = 25°C
0.1
0.010.0 0.2 0.4 0.6 0.8 1.0 1.2
-VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
ISSUE 2 - MAY 2007
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet ZXMP3A16N8.PDF ] | |
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