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PDF P2HNC60F Data sheet ( Hoja de datos )

Número de pieza P2HNC60F
Descripción STP2HNC60FP
Fabricantes STMicroelectronics 
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No Preview Available ! P2HNC60F Hoja de datos, Descripción, Manual

STP2HNC60
STP2HNC60FP
N-CHANNEL 600V - 4- 2.2A TO-220/TO-220FP
PowerMesh™II MOSFET
TYPE
VDSS
RDS(on)
ID
STP2HNC60
STP2HNC60FP
600 V
600 V
<5
<5
2.2 A
2.2 A
s TYPICAL RDS(on) = 4
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESHII is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
www.DataSheet4U.com
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 k)
Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt
Peak Diode Recovery voltage slope
VISO
Tstg
Tj
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
.
May 2001
Value
Unit
STP2HNC60 STP2HNC60FP
600 V
600 V
± 30 V
2.2
2.2(*)
A
1.4
1.4(*)
A
8.8
8.8(*)
A
60 30 W
0.48 0.24 W/°C
3.5 V/ns
--
2000
V
–65 to 150
°C
150 °C
(1)ISD 2.2A, di/dt 100A/µs, VDD V(BR)DSS, Tj TJMAX
(*).Limited only by maximum temperature allowed
1/9

1 page




P2HNC60F pdf
Gate Charge vs Gate-source Voltage
STP2HNC60/STP2HNC60FP
Capacitance Variations
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9

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