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PDF 2729-125 Data sheet ( Hoja de datos )

Número de pieza 2729-125
Descripción Radar
Fabricantes Advanced Power Technology 
Logotipo Advanced Power Technology Logotipo



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No Preview Available ! 2729-125 Hoja de datos, Descripción, Manual

2729-125
125 Watts, 36 Volts, 100µs, 10%
Radar 2700-2900 MHz
www.DataSheet4U.com
GENERAL DESCRIPTION
The 2729-125 is an internally matched, COMMON BASE bipolar transistor
capable of providing 125 Watts of pulsed RF output power at 100µs pulse
width, 10% duty factor across the 2700 to 2900 MHz band. The transistor
prematch and test fixture has been optimized through the use of Pulsed
Automated Load Pull. This hermetically solder-sealed transistor is specifically
designed for S-band radar applications. It utilizes gold metallization and emitter
ballasting to provide high reliability and supreme ruggedness.
CASE OUTLINE
55KS-1
Common Base
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25°C1
350 W
Maximum Voltage and Current
Collector to Base Voltage (BVces)
Emitter to Base Voltage (BVebo)
Collector Current (Ic)
Maximum Temperatures
65 V
3.0 V
15 A
Storage Temperature
-65 to +200 °C
Operating Junction Temperature +200 °C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
TEST CONDITIONS
Pout
Pin
Pg
ηc
VSWR
Power Output
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance1
F=2700-2900 MHz
Vcc = 36 Volts
Pulse Width = 100 µs
Duty Factor = 10%
F = 2900 MHz, Po = 125W
FUNCTIONAL CHARACTERISTICS @ 25°C
BVebo
BVces
hFE
θjc1
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC – Current Gain
Thermal Resistance
Ie = 30 mA
Ic = 120 mA
Vce = 5V, Ic = 600 mA
NOTE: 1. At rated output power and pulse conditions
MIN
125
9.0
45
TYP
9.5
55
MAX
15.7
2:1
UNITS
W
W
dB
%
3.0 V
56 65
V
18 50
0.5 °C/W
Issue April 2003
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at www.advancedpower.com or contact our factory direct.

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