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PDF IRF7823PBF Data sheet ( Hoja de datos )
| Número de pieza | IRF7823PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 97050
IRF7823PbF
Applications
l High Frequency Point-of-Load
Synchronous Buck Converter for
Applications in Networking &
Computing Systems
l Optimized for Control FET applications
VDSS
30V
S
Benefits
l Very Low RDS(on) at 4.5V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
l 100% Tested for RG
S
S
G
HEXFET® Power MOSFET
RDS(on) max
Qg
8.7m:@VGS = 10V 9.1nC
AA
1 8D
2 7D
3 6D
4 5D
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
fPower Dissipation
fPower Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Max.
30
± 20
13
11
100
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes through
are on page 10
www.irf.com
1
10/06/05
1 page  
14
12
10
8
6
4
2
0
25
50 75 100 125
TA , Ambient Temperature (°C)
150
Fig 9. Maximum Drain Current vs.
Case Temperature
IRF7823PbF
2.5
2.0
1.5 ID = 50µA
1.0
0.5
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
0.01
τJ τJ
τ1 τ1
R 1R 1
Ci= τi/Ri
C i= τi/R i
R 2R 2
τ2 τ2
R3R3 Ri (°C/W)
τAτA 7.520
τ3τ3 25.573
16.913
τi (sec)
0.013427
1.1097
36.9
0.001
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Ta
10 100
1000
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRF7823PBF.PDF ] | |
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