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PDF 20CTH03FP Data sheet ( Hoja de datos )

Número de pieza 20CTH03FP
Descripción (20CTH03xx) Hyperfast Rectifier
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! 20CTH03FP Hoja de datos, Descripción, Manual

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Bulletin PD-20769 rev. A 08/03
20CTH03
20CTH03S
20CTH03-1
20CTH03FP
Hyperfast Rectifier
Features
• Hyperfast Recovery Time
• Low Forward Voltage Drop
• Low Leakage Current
• 175°C Operating Junction Temperature
trr = 35ns max.
IF(AV) = 20Amp
VR = 300V
Description/ Applications
International Rectifier's 300V series are the state of the art Hyperfast recovery rectifiers designed with optimized
performance of forward voltage drop and Hyperfast recovery time.
The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in the output rectification stage of SMPS, UPS, DC-DC converters as well as
freewheeling diodes in low voltage inverters and chopper motor drives.
Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
Absolute Maximum Ratings
Parameters
VRRM
IF(AV)
IFSM
TJ, TSTG
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
@ TC = 135°C (FULLPACK)
@ TC = 160°C Per Diode
Per Diode
Per Device
Non Repetitive Peak Surge Current @ TJ = 25°C
Operating Junction and Storage Temperatures
Max
300
10
20
120
- 65 to 175
Units
V
A
°C
20CTH03
Case Styles
20CTH03S
20CTH03-1
20CTH03FP
Base
Common
Cathode
2
1
Anode
2
Common
Cathode
3
Anode
TO-220AB
www.irf.com
Base
Common
Cathode
2
1
Anode
2
Common
Cathode
3
Anode
D2PAK
Base
Common
Cathode
2
1
Anode
2
Common
Cathode
3
Anode
TO-262
2
1
Anode
Common
Cathode
3
Anode
TO-220 FULLPACK
1

1 page




20CTH03FP pdf
20CTH03, 20CTH03S, 20CTH03-1, 20CH03FP
Bulletin PD-20769 rev. A 08/03
100
IF = 10A
1000
IF = 10A
Tj = 125˚C
Tj = 25˚C
Vr = 200V
10
100 1000
di F /dt (A/µs )
Fig. 9 - Typical Reverse Recovery vs. di F /dt
Tj = 125˚C
100
Tj = 25˚C
Vr = 200V
10
100 1000
di F /dt (A/µs )
Fig. 10 - Typical Stored Charge vs. di F /dt
www.irf.com
Reverse Recovery Circuit
VR = 200V
L = 70µH
0.01
D.U.T.
diF /dt
dif/dt
ADJUST G
D
IRFP250
S
Fig. 11- Reverse Recovery Parameter Test Circuit
5

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