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PDF AO4705 Data sheet ( Hoja de datos )
| Número de pieza | AO4705 | |
| Descripción | P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AO4705
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
The AO4705 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. A
Schottky diode is provided to facilitate the
implementation of non-synchronous DC-DC
converters. Standard Product AO4705 is Pb-free
(meets ROHS & Sony 259 specifications). AO4705L
is a Green Product ordering option. AO4705 and
AO4705L are electrically identical.
Features
VDS (V) = -30V
ID = -10A (VGS = -10V)
RDS(ON) < 14mΩ (VGS = -20V)
RDS(ON) < 16mΩ (VGS = -10V)
SCHOTTKY
VDS (V) = 30V, IF = 5A, VF<0.52V@3A
A 1 8 D/K
S 2 7 D/K
S 3 6 D/K
G 4 5 D/K
SOIC-8
G
www.DataSheet4U.com Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain CurrentA
TA=25°C
TA=70°C
ID
Pulsed Drain CurrentB
IDM
Schottky reverse voltage
VKA
Continuous Forward CurrentA
TA=25°C
TA=70°C
IF
Pulsed Forward CurrentB
IFM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
DK
SA
MOSFET
-30
±25
-10
-8
-60
3
2
-55 to 150
Schottky
30
5
3.5
30
3
2
-55 to 150
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-AmbientA
t ≤ 10s
Maximum Junction-to-AmbientA
Steady-State
Maximum Junction-to-LeadC
Steady-State
Thermal Characteristics Schottky
Maximum Junction-to-AmbientA
t ≤ 10s
Maximum Junction-to-AmbientA
Maximum Junction-to-LeadC
Steady-State
Steady-State
Symbol
RθJA
RθJL
RθJA
RθJL
Typ
28
54
21
36
67
25
Max
40
75
30
40
75
30
Units
V
V
A
V
A
W
°C
Units
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page  
AO4705
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
10
125°C
1
0.1
0.01
25°C
0.001
0.0 0.2 0.4 0.6 0.8 1.0
VF (Volts)
Figure 12: Schottky Forward Characteristics
600
f = 1MHz
500
400
300
200
100
0
0 5 10 15 20 25 30
VKA (Volts)
Figure 13: Schottky Capacitance Characteristics
0.7
0.6 IF=5A
0.5
0.4
IF=3A
0.3
0.2
0.1
0
25 50 75 100 125 150
Temperature (°C)
Figure 14: Schottky Forward Drop vs.
Junction Temperature
175
1.0E-01
1.0E-02
1.0E-03
1.0E-04
VR=24V
1.0E-05
1.0E-06
0
25 50 75 100 125 150 175
Temperature (°C)
Figure 15: Schottky Leakage current vs. Junction
Temperature
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1 RθJA=40°C/W
0.1
0.01
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
PD
Ton T
1 10
100 1000
Alpha & Omega Semiconductor, Ltd.
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AO4705.PDF ] | |
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