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PDF AO4704 Data sheet ( Hoja de datos )
| Número de pieza | AO4704 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AO4704
N-Channel Enhancement Mode Field Effect Transistor with
Schottky Diode
General Description
Features
The AO4704 uses advanced trench technology to
provide excellent RDS(ON), shoot-through immunity and
body diode characteristics.This device is suitable for
use as a synchronous switch in PWM applications.
The co-packaged Schottky Diode boosts efficiency
further. AO4704 is Pb-free (meets ROHS & Sony
259 specifications). AO4704L is a Green Product
ordering option. AO4704 and AO4704L are
electrically identical.
VDS (V) = 30V
ID = 13 A (VGS = 10V)
RDS(ON) < 11.5mΩ (VGS = 10V)
RDS(ON) < 13mΩ (VGS = 4.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF<0.5V@1A
www.DataSheet4U.com
SOIC-8
S/A 1 8 D/K
S/A 2 7 D/K
S/A 3 6 D/K
G 4 5 D/K
DK
G
SA
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
MOSFET
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±12
Continuous Drain CurrentA
TA=25°C
TA=70°C
ID
13
10.4
Pulsed Drain CurrentB
IDM 40
Schottky reverse voltage
VKA
Continuous Forward CurrentA
TA=25°C
TA=70°C
IF
Pulsed Diode Forward CurrentB
IFM
Power Dissipation
TA=25°C
TA=70°C
PD
3.1
2
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
Schottky
30
4.4
3.2
30
3.1
2
-55 to 150
Units
V
V
A
V
A
W
°C
Alpha & Omega Semiconductor, Ltd.
1 page  
AO4704
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
VDS=15V
4 ID=13A
10000
Ciss
3
1000
2 Coss FET+SCHOTTKY
1
0
0 10 20 30 40
Qg (nC)
Figure 7: Gate-Charge Characteristics
100
0
Crss
5 10 15 20 25
VDS(Volts)
Figure 8: Capacitance Characteristics
30
100
RDS(ON)
limited
10
10µs
10ms
100µs
1ms
1s 0.1s
1 10s
TJ(Max) =150°C
TA =25°C
0.1
0.1
1
DC
10
100
VDS(Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area (Note E)
50
40
30
20
10
0
0.01
0.1
1
10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.00001
0.0001
PD
Single Pulse
Ton
T
0.001
0.01
0.1
1
10
Pulse Width (S)
Figure 11: Normalized Maximum Transient Thermal Impedence
100
1000
Alpha & Omega Semiconductor, Ltd.
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AO4704.PDF ] | |
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