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PDF AO4701 Data sheet ( Hoja de datos )
| Número de pieza | AO4701 | |
| Descripción | P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
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July 2001
AO4701
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
The AO4701 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. A
Schottky diode is provided to facilitate the
implementation of a bidirectional blocking switch.
Features
VDS (V) = -30V
ID = -5A
RDS(ON) < 49mΩ (VGS = 10V)
RDS(ON) < 64mΩ (VGS = 4.5V)
RDS(ON) < 120mΩ (VGS = 2.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF=0.5V@1A
A 18K
A 27K
S 36D
G 45D
SOIC-8
G
www.DataSheet4U.com Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain CurrentA
TA=25°C
TA=70°C
ID
Pulsed Drain CurrentB
IDM
Schottky reverse voltage
VKA
Continuous Forward CurrentA
TA=25°C
TA=70°C
IF
Pulsed Forward CurrentB
IFM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-AmbientA
t ≤ 10s
Maximum Junction-to-AmbientA
Steady-State
Maximum Junction-to-LeadC
Steady-State
Thermal Characteristics Schottky
Maximum Junction-to-AmbientA
t ≤ 10s
Maximum Junction-to-AmbientA
Steady-State
Maximum Junction-to-LeadC
Steady-State
Symbol
RθJA
RθJL
RθJA
RθJL
DK
SA
MOSFET
-30
±12
-5
-4.2
-30
2
1.44
-55 to 150
Typ
48
74
35
49
72
37
Schottky
30
4.4
3.2
30
2
1.44
-55 to 150
Max
62.5
110
40
62.5
110
42
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
V
A
W
°C
Units
°C/W
°C/W
1 page  
AO4701
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
VDS=-15V
4 ID=-5A
3
2
1
0
0 2 4 6 8 10 12
-Qg (nC)
Figure 7: Gate-Charge Characteristics
1400
1200
1000
800
Ciss
600
400
Coss
200
Crss
0
0 5 10 15 20 25
-VDS (Volts)
Figure 8: Capacitance Characteristics
30
100.0
TJ(Max)=150°C
TA=25°C
10.0
RDS(ON)
limited
1.0 1s
10µs
100µs
1ms
0.1s
10ms
10s
DC
0.1
0.1 1 10
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
40
TJ(Max)=150°C
TA=25°C
30
20
10
0
0.001
0.01
0.1
1
10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.00001
0.0001
PD
Single Pulse
Ton T
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
100
1000
Alpha & Omega Semiconductor, Ltd.
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet AO4701.PDF ] | |
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