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PDF AO4700 Data sheet ( Hoja de datos )
| Número de pieza | AO4700 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AO4700
N-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
The AO4700 uses advanced trench technology to provide
excellent R DS(ON) and low gate charge. A Schottky diode is
provided to facilitate the implementation of a bidirectional
blocking switch, or for non-synchronous DC-DC conversion
applications. Standard Product AO4700 is Pb-free (meets
ROHS & Sony 259 specifications). AO4700L is a Green
Product ordering option. AO4700 and AO4700L are
electrically identical.
Features
VDS (V) = 30V
ID = 6.9A (VGS = 10V)
RDS(ON) < 28mΩ (VGS = 10V)
RDS(ON) < 42mΩ (VGS = 4.5V)
SCHOTTKY
VDS (V) = 30V, IF = 4A, VF<0.5V@3A
A 18K
A 27K
S 36D
G 45D
SOIC-8
DK
G
SA
Absolute Maximum Ratings TA=25°C unless otherwise noted
www.DataSheet4U.com Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current A
TA=25°C
TA=70°C
ID
Pulsed Drain Current B
IDM
Schottky reverse voltage
VKA
Continuous Forward Current A
TA=25°C
TA=70°C
IF
Pulsed Forward Current B
IFM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
MOSFET
30
±20
6.9
5.8
30
2
1.28
-55 to 150
Schottky
30
4
2.6
40
2
1.28
-55 to 150
Units
V
V
A
V
A
W
°C
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-Ambient A
t ≤ 10s
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Steady-State
Steady-State
Thermal Characteristics Schottky
Maximum Junction-to-Ambient A
t ≤ 10s
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Steady-State
Steady-State
Symbol
RθJA
RθJL
RθJA
RθJL
Typ
48
74
35
44
73
31
Max
62.5
110
40
62.5
110
40
Units
°C/W
°C/W
1 page  
AO4700
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
1.00E+01
1.00E+00
125°C
1.00E-01
1.00E-02
25°C
1.00E-03
0.0 0.2 0.4 0.6 0.8 1.0
VF (Volts)
Figure 12: Schottky Forward Characteristics
600
f = 1MHz
500
400
300
200
100
0
0 5 10 15 20 25 30
VKA (Volts)
Figure 13: Schottky Capacitance Characteristics
0.7
0.6
IF=5A
0.5
0.4
IF=3A
0.3
0.2
0.1
0
25 50 75 100 125 150
Temperature (°C)
Figure 14: Schottky Forward Drop vs.
Junction Temperature
175
1.0E-01
1.0E-02
1.0E-03
1.0E-04
VR=24V
1.0E-05
1.0E-06
0
25 50 75 100 125 150 175
Temperature (°C)
Figure 15: Schottky Leakage current vs. Junction
Temperature
10
D=Ton/(Ton+Toff)
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=62.5°C/W
1
0.1
0.01
0.00001
Single Pulse
PD
Ton
Toff
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 15: Schottky Normalized Maximum Transient Thermal Impedance
100
1000
Alpha & Omega Semiconductor, Ltd.
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AO4700.PDF ] | |
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