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PDF IRG4BC30FD1 Data sheet ( Hoja de datos )
| Número de pieza | IRG4BC30FD1 | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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INSULATED GATE BIPOLAR TRANSISTOR WITH
HYPERFAST DIODE
Features
Fast: optimized for medium operating frequencies
(1-5 kHz in hard switching, >20kHz in resonant mode).
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3.
IGBT co-packaged with Hyperfast FRED diodes for ultra low
recovery characteristics.
Industry standard TO-220AB package.
Benefits
Generation 4 IGBT's offer highest efficiency available.
IGBT's optimized for specific application conditions.
FRED diodes optimized for performance with IGBT's.
Minimized recovery characteristics require less / no
snubbing.
PD - 94773
IRG4BC30FD1
Fast CoPack IGBT
C
VCES = 600V
G
E
n-channel
VCE(on) typ. = 1.59V
@VGE = 15V, IC = 17A
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C
ICM
ILM
Continuous Collector Current
cPulse Collector Current (Ref.Fig.C.T.5)
dClamped Inductive Load current
IF @ TC = 100°C Diode Continuous Forward Current
IFM Diode Maximum Forward Current
VGE Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
Storage Temperature Range, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal / Mechanical Characteristics
Parameter
RθJC Junction-to-Case- IGBT
RθJC Junction-to-Case- Diode
RθCS
Case-to-Sink, flat, greased surface
RθJA Junction-to-Ambient, typical socket mount
Wt Weight
www.irf.com
TO-220AB
Max.
600
31
17
120
120
8
16
±20
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
°C
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
2.0 (0.07)
Max.
1.2
2.0
–––
80
–––
Units
°C/W
g (oz.)
1
09/03/03
1 page  
IRG4BC30FD1
2000
1800
1600
1400
1200
1000
800
600
400
200
0
1
VGS = 0V, f = 1 MHZ
Cies = C ge + Cgd, C ce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
Coes
Cres
10 100
VCE, Collector-toEmitter-Voltage(V)
1000
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
14
VCC = 400V
12 IC = 17A
10
8
6
4
2
0
0 10 20 30 40 50
Q G, Total Gate Charge (nC)
60
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
2000
1900
VCE = 480V
VGE = 15V
TJ = 25°C
IC = 17A
1800
1700
1600
0
10 20 30 40
RG, Gate Resistance (Ω)
50
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
9000
8000
7000
6000
ÃRG = 22Ω
VGE = 15V
VCC = 480V
IC = 34A
5000
4000
3000
2000
1000
IC = 17A
IC = 8.5A
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Juntion Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRG4BC30FD1.PDF ] | |
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