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Número de pieza | IRF7478PBF | |
Descripción | SMPS MOSFET | |
Fabricantes | International Rectifier | |
Logotipo | ||
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SMPS MOSFET
PD- 95280
IRF7478PbF
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
l Lead-Free
VDSS
60V
RDS(on) max (mW)
26@VGS = 10V
30@VGS = 4.5V
ID
4.2A
3.5A
Benefits
l Low Gate to Drain Charge to Reduce
S
Switching Losses
S
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See S
App. Note AN1001)
G
l Fully Characterized Avalanche Voltage
and Current
18
27
36
45
Top View
AA
D
D
D
D
SO-8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
7.0
5.6
56
2.5
0.02
± 20
3.7
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Notes through are on page 8
www.irf.com
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
09/21/04
1 page IRF7478PbF
8.0
RD
VDS
6.0 VGS D.U.T.
RG +-VDD
10V
4.0
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
2.0
0.0
25
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
0.01
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
0.0001
0.001
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01 0.1
1
t1, Rectangular Pulse Duration (sec)
10
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet IRF7478PBF.PDF ] |
Número de pieza | Descripción | Fabricantes |
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