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Número de pieza | FDS6982AS | |
Descripción | Dual Notebook Power Supply N-Channel PowerTrench SyncFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
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December 2006
FDS6982AS
Dual Notebook Power Supply N-Channel PowerTrench® SyncFET™
General Description
Features
tm
The FDS6982AS is designed to replace two single SO-
8 MOSFETs and Schottky diode in synchronous
DC:DC power supplies that provide various peripheral
voltages for notebook computers and other battery
powered electronic devices. FDS6982AS contains two
unique 30V, N-channel, logic level, PowerTrench
MOSFETs designed to maximize power conversion
efficiency. The high-side switch (Q1) is designed with
specific emphasis on reducing switching losses while
the low-side switch (Q2) is optimized to reduce
conduction losses. Q2 also includes an integrated
Schottky diode using Fairchild’s monolithic SyncFET
technology.
Applications
• Notebook
• Q2: Optimized to minimize conduction losses
Includes SyncFET Schottky body diode
8.6A, 30V
RDS(on) max= 13.5mΩ @ VGS = 10V
RDS(on) max= 16.5mΩ @ VGS = 4.5V
• Low gate charge (21nC typical)
• Q1: Optimized for low switching losses
6.3A, 30V
RDS(on) max= 28.0mΩ @ VGS = 10V
RDS(on) max= 35.0mΩ @ VGS = 4.5V
• Low gate charge (11nC typical)
D1
D1
D2
D2
SO-8
G1
S1
G2
S2
5
6 Q1
7
Q2
8
4
3
2
1
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1a)
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6982AS
FDS6982AS
13”
FDS6982AS
FDS6982AS_NL (Note 4)
13”
FDS6982AS
FDS6982AS_NF40 (Note 5)
13”
©2006 Fairchild Semiconductor Corporation
Q2 Q1
30 30
±20 ±20
8.6 6.3
30 20
2
1.6
1
0.9
–55 to +150
Units
V
V
A
W
°C
78 °C/W
40 °C/W
Tape width
12mm
12mm
12mm
Quantity
2500 units
2500 units
2500 units
FDS6982AS Rev B
1 page Typical Characteristics: Q2
10
ID = 8.6A
8
6
4
VDS = 10V
20V
15V
2
0
0 5 10 15 20 25
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
VGS = 10V
0.1 SINGLE PULSE
RθJA = 135oC/W
TA = 25oC
100µs
1ms
10ms
100ms
1s
10s
DC
0.01
0.1
1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
2000
1600
f = 1MHz
VGS = 0 V
1200
Ciss
800
400
Crss
0
0
Coss
5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
RθJA = 135°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01
0.1 1 10
t1, TIME (sec)
100
Figure 10. Single Pulse Maximum
Power Dissipation.
1000
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1 1
t1, TIME (sec)
RθJA(t) = r(t) * RθJA
RθJA = 135°C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6982AS Rev B
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet FDS6982AS.PDF ] |
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