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PDF FDMA430NZ Data sheet ( Hoja de datos )
| Número de pieza | FDMA430NZ | |
| Descripción | Single N-Channel 2.5V Specified PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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September 2006
FDMA430NZ
Single N-Channel 2.5V Specified PowerTrench® MOSFET
tm
30V, 5.0A, 40mΩ
General Description
This Single N-Channel MOSFET has been designed using
Fairchild Semiconductor’s advanced Power Trench process
to optimize the RDS(on) @VGS=2.5V on special MicroFET
leadframe.
Applications
Li-lon Battery Pack
Features
RDS(on) = 40mΩ @ VGS = 4.5 V, ID = 5.0A
RDS(on) = 50mΩ @ VGS = 2.5 V, ID = 4.5A
Low Profile-0.8mm maximum-in the new package
MicroFET 2x2 mm
RoHS Compliant
www.DataSheet4U.com
Pin 1
DD G
Drain
Source
DD S
MicroFET 2X2 (Bottom View)
S4
3G
D5
2D
D6
1D
Bottom Drain Contact
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current -Continuous
-Pulsed
(Note 1a)
PD Power dissipation (Steady State)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
RθJA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
430
Device
FDMA430NZ
Reel Size
7”
Tape Width
12mm
Ratings
30
±12
5.0
20
0.9
2.4
-55 to +150
Units
V
V
A
W
oC
145 oC/W
52
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
FDMA430NZ Rev B1
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25°C unless otherwise noted
2
1
0.1
0.01
10-4
DUTY CYCLE-DESCENDING ORDER
D =0.5
0.2
0.1
0.05
0.02
0.01
PDM
SINGLE PULSE
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK
RθJA =
T1J45=oPCDM
x
ZθJA
x
RθJA
+
TA
10-3
10-2
10-1
100
101
102
103
t, RECTANGULAR PULSE DURATION(s)
Figure 12. Transient Thermal Response Curve
FDMA430NZ Rev B1
5 www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDMA430NZ.PDF ] | |
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