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PDF FDMA420NZ Data sheet ( Hoja de datos )
| Número de pieza | FDMA420NZ | |
| Descripción | Single N-Channel 2.5V Specified PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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September 2006
FDMA420NZ
Single N-Channel 2.5V Specified PowerTrench® MOSFET
20V, 5.7A, 30mΩ
tm
General Description
This Single N-Channel MOSFET has been designed using
Fairchild Semiconductor’s advanced Power Trench
process to optimize the RDS(on) @VGS=2.5V on special
MicroFET leadframe.
Applications
Li-lon Battery Pack
Features
RDS(on) = 30mΩ @ VGS = 4.5 V, ID = 5.7A
RDS(on) = 40mΩ @ VGS = 2.5 V, ID = 5.0A
Low Profile-0.8mm maximum-in the new package
MicroFET 2x2 mm
RoHS Compliant
www.DataSheet4U.com
Pin 1
DDG
Drain
Source
S4
D5
3G
2D
DD S
MicroFET Bottom View 2X2
D6
Bottom Drain Contact
1D
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current -Continuous
-Pulsed
(Note 1a)
PD Power dissipation (Steady State)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
RθJA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
420
Device
FDMA420NZ
Reel Size
7”
Tape Width
12mm
Ratings
20
±12
5.7
24
0.9
2.4
-55 to +150
Units
V
V
A
W
oC
145 oC/W
52
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
FDMA420NZ Rev B1
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25°C unless otherwise noted
2
1
0.1
0.01
10-4
DUTY CYCLE-DESCENDING ORDER
D =0.5
0.2
0.1
0.05
0.02
0.01
PDM
SINGLE PULSE
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK
RθJA =
T1J45=oPCDM
x
ZθJA
x
RθJA
+
TA
10-3
10-2
10-1
100
101
102
103
t, RECTANGULAR PULSE DURATION(s)
Figure 12. Transient Thermal Response Curve
FDMA420NZ Rev B1
5 www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDMA420NZ.PDF ] | |
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