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Número de pieza | FDJ1028N | |
Descripción | N-Channel 2.5 Vgs Specified PowerTrench MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FDJ1028N (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! August 2006
FDJ1028N
N-Channel 2.5 Vgs Specified PowerTrench® MOSFET
Features
■ 3.2 A, 20 V.
RDS(ON) = 90 mΩ @ VGS = 4.5 V
RDS(ON) = 130 mΩ @ VGS = 2.5 V
■ Low gate charge
■ High performance trench technology for extremely low
RDS(ON)
■ FLMP SC75 package: Enhanced thermal performance in
industry-standard package size
Applications
■ Battery management
General Description
This dual N-Channel 2.5V specified MOSFET uses Fairchild’s
advanced low voltage PowerTrench process. Packaged in FLMP
SC75, the RDS(ON) and thermal properties of the device are
optimized for battery power management applications.
www.DataSheet4U.com
S2
S1
G1
G2
S2
S1
Bottom Drain Contact
43
52
61
Bottom Drain Contact
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for single Operation
(Note 1a)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient (Note 1a)
Thermal Resistance, Junction-to-Case
Ratings
20
±12
3.2
12
1.5
–55 to +150
80
5
Packge Marking and Ordering Information
Device Marking
.F
Device
FDJ1028N
Reel Size
7"
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
©2005 Fairchild Semiconductor Corporation
FDJ1028N Rev. B3 (W)
1
www.fairchildsemi.com
1 page Dimensional Outline and Pad Layout
DRAIN
1
PKG
CL
3
(0.24)
(0.18)
0.30
0.20
PKG CL
(0.73)
(0.46)
(0.50)
DRAIN 1
6 4 DRAIN 2
Bottom View
1.70
1.50
PKG
CL
A
64
B
PKG CL
1.75
1.55
(0.20)
1
0.50
1.00
3
0.275
0.125
0.075 M A B
Top View
PKG
CL
0.80
0.65
0.225
0.075
SEATING
PLANE
PKG
CL
1.075
0.925
2.15
1.85
0.30 MIN
DRAIN 1
TERMINAL
6
0.20
PKG
0.84 CL
0.60
1
0.50
PKG
CL
1.00
4
2.35 MIN
1.35
0.50 MIN
3
DRAIN 2
TERMINAL
Recommended Landing Pattern
FDJ1028N Rev. B3 (W)
5
www.fairchildsemi.com
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet FDJ1028N.PDF ] |
Número de pieza | Descripción | Fabricantes |
FDJ1028N | N-Channel 2.5 Vgs Specified PowerTrench MOSFET | Fairchild Semiconductor |
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