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PDF 2N6650 Data sheet ( Hoja de datos )
| Número de pieza | 2N6650 | |
| Descripción | (2N6648 - 2N6650) PNP DARLINGTON POWER SILICON TRANSISTOR | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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TECHNICAL DATA
PNP DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/527
Devices
2N6648
2N6649
2N6650
Qualified Level
JANTX
JANTXV
www.DataSheet4U.com
MAXIMUM RATINGS
Ratings
Symbol 2N6648 2N6649 2N6650 Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TA = +250C (1)
@ TC = +250C (2)
Operating & Storage Junction Temperature Range
VCEO
VCBO
VEBO
IB
IC
PT
TJ, Tstg
-40 -60 -80
-40 -60 -80
-5.0
-0.25
-10
5.0
85
-65 to +175
Vdc
Vdc
Vdc
Adc
Adc
W
W
0C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance Junction-to-Case
1) Derate linearly 33.3 mW/0C for TA > +250C
2) Derate linearly 567 mW/0C for TC > +250C
RθJC
1.76 0C/W
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
2N6648
2N6649
V(BR)CEO
2N6650
Collector-Emitter Breakdown Voltage
IC = 200 mAdc, RBB = 100 Ω
2N6648
2N6649
V(BR)CER
2N6650
Collector-Base Cutoff Current
VCB = -40 Vdc
2N6648
ICBO
VCB = -60 Vdc
2N6649
VCB = -80 Vdc
2N6650
Min.
-40
-60
-80
-40
-60
-80
TO-3* (TO-204AA)
*See Appendix A for
package outline
Max.
Unit
Vdc
Vdc
-1.0
-1.0 mAdc
-1.0
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N6650.PDF ] | |
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