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PDF 2N5681 Data sheet ( Hoja de datos )
| Número de pieza | 2N5681 | |
| Descripción | (2N5681 / 2N5682) NPN POWER TRANSISTOR SILICON AMPLIFIER | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N5681 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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TECHNICAL DATA
NPN POWER TRANSISTOR SILICON AMPLIFIER
Qualified per MIL-PRF-19500/583
Devices
2N5681
2N5682
Qualified Level
JAN
JANTX
JANTXV
www.DataSheet4U.com
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Ratings
Symbol 2N5681 2N5682 Units
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation
@ TA = +250C(1)
@ TC = +250C(2)
VCEO
VCBO
VEBO
IC
IB
PT
100
100
4.0
1.0
0.5
1.0
10
120 Vdc
120 Vdc
4.0 Vdc
1.0 Adc
0.5 Adc
1.0 W
10 W
Operating & Storage Temperature Range
Top, Tstg -65 to +200 -65 to +200 °C
THERMAL CHARACTERISTICS
TO-39*
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 5.7 mW/0C for TA > +250C
2) Derate linearly 57 mW/0C for TC > +250C
Symbol
RθJC
Max.
17.5
Unit (TO-205AD)
0C
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
Min.
*See appendix A for
package outline
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
2N5681
2N5682
V(BR)CEO
100
120
Vdc
Emitter-Base Cutoff Current
VEB = 4.0 Vdc
Collector-Emitter Cutoff Current
IEBO
1.0 µAdc
VCE = 70 Vdc
2N5681
VCE = 80 Vdc
2N5682
Collector-Emitter Cutoff Current
ICEO
10 µAdc
VBE = 1.5 Vdc
VCE = 100 Vdc
2N5681
ICEX
100 nAdc
VCE = 120 Vdc
2N5682
Collector-Baser Cutoff Current
VCE = 100 Vdc
VCE = 120 Vdc
2N5681
2N5682
ICBO
100 nAdc
6 Lake Street, Lawrence, MA 01841
120101
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N5681.PDF ] | |
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