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PDF 2N5179 Data sheet ( Hoja de datos )

Número de pieza 2N5179
Descripción RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Fabricantes Advanced Power Technology 
Logotipo Advanced Power Technology Logotipo

2N5179 datasheet


1. - Vcbo=20V, NPN RF Transistor






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No Preview Available ! 2N5179 Hoja de datos, Descripción, Manual

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
2N5179
Features
Silicon NPN, TO-72 packaged VHF/UHF Transistor
Low Noise, NF = 4.5 dB (max) @ 200 MHz
High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10
mAdc
Characterized with S-Parameters
2
13
4
1. Emitter
2. Base
3. Collector
4. Case
TO-72
DESCRIPTION:
The 2N5179 is a Silicon NPN transistor, designed for VHF and UHF equipment. It is ideal
forwww.DataSheet4U.compre-driver, low noise amplifier, and oscillator applications.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
VCEO
VCBO
VEBO
IC
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Thermal Data
PD Total Device Dissipation @ TA = 25ºC
Derate above 25ºC
Value
12
20
2.5
50
300
1.71
Unit
Vdc
Vdc
Vdc
mA
mW
mW/ ºC
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

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2N5179 pdf
2N5179
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

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