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PDF 2N4239 Data sheet ( Hoja de datos )
| Número de pieza | 2N4239 | |
| Descripción | (2N4237 - 2N4239) NPN MEDIUM POWER SILICON TRANSISTOR | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N4239 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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TECHNICAL DATA
NPN MEDIUM POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/581
Devices
Qualified Level
2N4237
2N4238
2N4239
JANTX
JANTXV
www.DataSheet4U.com
MAXIMUM RATINGS (TA = 250C Unless Otherwise noted)
Ratings
Symbol 2N4237 2N4238 2N4239 Units
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation @ TA = +250C(1)
@ TC = +250C(2)
Operating & Storage Temperature Range
VCEO
VCBO
VEBO
IC
IB
PT
Top, Tstg
40 60 80
50 80 100
6.0
1.0
0.5
1.0
6.0
-65 to +200
Vdc
Vdc
Vdc
Adc
Adc
W
W
°C
TO-39*
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
1) Derate linearly 5.7 mW/0C for TA > +250C
2) Derate linearly 34 mW/0C for TC > +250C
RθJC
29 0C/W
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
Min.
*See appendix A for
package outline
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100 mAdc
2N4237
2N4238
V(BR)CEO
50 Vdc
80
2N4239
100
Emitter-Base Cutoff Current
VEB = 6.0 Vdc
Collector-Emitter Cutoff Current
IEBO
0.5 mAdc
VCE = 90 Vdc, VBE = 1.5 Vdc
VCE = 50 Vdc
VCE = 80 Vdc
2N4237
2N4238
ICEX
100 nAdc
100
VCE = 10 Vdc
2N4239
Collector-Base Cutoff Current
100
VCE = 50 Vdc
VCE = 80 Vdc
2N4237
2N4238
ICBO
100 nAdc
100
VCE = 10 Vdc
2N4239
100
6 Lake Street, Lawrence, MA 01841
120101
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N4239.PDF ] | |
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